Fairchild Semiconductor RFD16N06LESM Datasheet

RFD16N06LESM

Data Sheet September 2002

16A, 60V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs

These are N-Channel power MOSFETs manu factured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regu la tors, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49027.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N06LESM* TO-252AA 16N06LE

NOTE: When ordering, use the entire part number. Add suffix 9A to
obtain the TO-25 2AA v arian t in the t ape and re el, i.e . ,
RFD16N06LESM9A.

*RFD16N06LESM is only av a ilabe in tape and re el.

Features

• 16A, 60V

•r

• Temperature Compensating PSPICE

• Can be Driven Directly from CMOS, NMOS, TTL
Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047Ω

DS(ON)

Components to PC Boards”

®

Model

Symbol

D

G

S

Packaging

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

©2002 Fairchild Semiconductor Corporation RFD16N06LESM Rev. B1

RFD16N06LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD16N06LESM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drai n C u rr e n t (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DSS

DGR

GS

D

DM

AS

D

, T

J

STG

Refer to Peak Current Curve

Maximum Tem perature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

+10, -8 V

16

Refer to UIS Cu r ve

90

0.606

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

= 25oC to 150oC.

1. T

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

ID = 250µA, VGS = 0V, Figure 11 60 - - V
VGS = VDS, ID = 250µA, Figure 10 1 - 3 V
VDS = 55V, VGS = 0V - - 1 µA
V

= 50V, VGS = 0V, TC = 150oC - - 250 µA

DS

VGS = +10, -8V - - 10 µA

= 16A, VGS = 5V - - 0.047 Ω

VDD = 30V, ID = 16A, RL = 1.88Ω,
V

= 5V, RGS = 5Ω

GS

Figures 16, 17

- - 100 ns

-11- ns

-60- ns

-48- ns

-35- ns

- - 115 ns

VGS = 0V to 10V VDD = 48V,

I

= 16A, RL = 3Ω

VGS = 0V to 5V - 29 35 nC

D

Figures 18, 19

-5162nC

VGS = 0V to 1V - 1.8 2.6 nC
VDS = 25V, VGS = 0V,

f = 1MHz
Figure 12

- 1350 - pF

- 300 - pF

-90- pF

- - 1.65

TO-251AA, TO-252AA - - 80

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs , Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.

©2002 Fairchild Semiconductor Corporation RFD16N06LESM Rev. B1

ISD = 16A - - 1.5 V
ISD = 16A, dISD/dt = 100A/µs - - 125 ns

RFD16N06LESM

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED PO WER DISSIP ATION vs CASE

TEMPERATURE

200

100

TC = 25oC

T

= MAX RATED

J

100µs

20

15

10

, DRAIN CURRENT (A)

D

5

I

0

1750

25

50

75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

500

TC = 25oC

VGS = 10V

100

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

o

25

(

C DERATE PEAK

175 - T

C

150

)

10

DRAIN CURRENT (A)

D,

I

1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

V

DSS

MAX = 60V

1ms

10ms

100

VGS = 5V

, PEAK CURRENT CAPABILITY (A)

DM

I

10

-6

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

-5

10

10

t, PULSE WIDTH (s)

-2

-3

10

10

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. PEAK CURRENT CAPABILITY

100

STAR TING T
STARTING TJ = 150oC

10

AVALANCHE CURRENT (A)

If R = 0

,

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

= 25oC

J

- VDD) +1]

100

T

=25oC

C

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

0 1.5 3.0 4.5 6.0 7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

10-110

VGS = 5V

V

V

V

0

GS

GS

GS

= 4.5V

= 4V

= 3V

1

10

FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING FIGURE 6. SATURATION CHARACTERISTICS

©2002 Fairchild Semiconductor Corporation RFD16N06LESM Rev. B1