Fairchild Semiconductor RFD16N05SM Datasheet

GATE

SOURCE

DRAIN (FLANGE)

RFD16N05, RFD16N05SM

Data Sheet January 2002

16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs

The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05 TO-251AA F16N05

RFD16N05SM TO-252AA F16N05

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.

Packaging

Features

• 16A, 50V

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047 Ω

DS(ON)

o

C Operating Temperature

Components to PC Boards”

®

Model

Symbol

D

G

S

JEDEC TO-251AA JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

©2002 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B

± 20

µ

±

Ω

θ

θ

RFD16N05, RFD16N05SM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFD16N05, RFD16N05SM, UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above 25

o

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DSS

DGR

D

DM

GS

AS

D

T

J,

STG

Refer to Peak Current Curve

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V
50 V
16

Refer to Figure 5

72

0.48

-55 to 175

300
260

W/

A

V

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

1. T

Electrical Specifications

C to 150

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

(OFF)

g(TOT)

Gate Charge at 10V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

I

DSS

DSS

GSS

(ON)

r

= 250 µ A, V

D

V

= V

GS

DS

V

= Rated BV

DS

V

= 0.8 x Rated BV

DS

T

= 150

C

V

= ± 20V - -

GS

I

= 16A, V

D

V

= 25V, I

DD

V

= 10V, R

GS

(Figure 13)

= 0V (Figure 11) 50 - - V

GS

, I

= 250 µ A2-4V

D

, V

DSS

o

C

= 10V (Figure 9) - - 0.047

GS

= 8A, R

D

= 25 Ω

GS

= 0V - - 1

GS

, V

DSS

= 3.125 Ω ,

L

GS

= 0V,

--25 µ A

- - 65 ns

-14 - ns

-30 - ns

-55 - ns

f

-30 - ns

- - 125 ns

V

= 0V to 20V V

GS

V

g(10)

(TH)

ISS

OSS

RSS

JC

JA

= 0V to 10V - - 45 nC

GS

V

= 0V to 2V - - 2.2 nC

GS

V

= 25V, V

DS

= 0V, f = 1MHz

GS

(Figure 12)

TO-251 and TO-252 - - 100

= 40V, I

DD

R

= 2.5 Ω

L

I

= 0.8mA

g(REF)

(Figure 13)

16A,

≈

D

- - 80 nC

- 900 - pF

- 325 - pF

- 100 - pF

- - 2.083

100 nA

o

C/W

o

C/W

A

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 250 µ s, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

©2002 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B

SD

rr

I

= 16A - - 1.5 V

SD

I

= 16A, dI

SD

/dt = 100A/ µ s - - 125 ns

SD

8

4

0

25 50 75 100

125

150

12

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

16

175

20

t, PULSE WIDTH (s)

10

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100

I

DM

, PEAK CURRENT (A)

200

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

I = I

25

175 - T

C

150

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

VGS = 20V

VGS = 10V

TC = 25oC

RFD16N05, RFD16N05SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TENPERATURE

2

1

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01
10

100

10

OPERATION IN THIS
AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

©2002 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

V

DSS(MAX)

-3

10

t, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

T

= MAX RATED

J

TC = 25oC

= 50V

100µs

1ms

10ms

100ms

DC

100

P

DM

t

1

t

1/t2

JA

x R

2

+ T

JA

A

θ

1

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

θ

0

10