Fairchild Semiconductor RFD16N05LSM Datasheet

GATE

SOURCE

DRAIN (FLANGE)

RFD16N05L, RFD16N05LSM

Data Sheet January 2002

16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.

Formerly developmental type TA09871.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05L TO-251AA RFD16N05L

RFD16N05LSM TO-252AA RFD16N05LSM

NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A

Features

• 16A, 50V

•r

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047 Ω

DS(ON)

Components to PC Boards”

Symbol

D

Packaging

DRAIN (FLANGE)

G

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

©2002 Fairchild Semiconductor Corporation RFD16N05L, RFD16N05LSM Rev. B

±

= ±

Ω

Ω

θ

θ

RFD16N05L, RFD16N05LSM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFD16N05L,

RFD16N05LSM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DS

DGR

D

DM

GS

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V

50 V

16
45

10 V

60

0.48

-55 to 150

300
260

W/

A
A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

C to 125

1. T

Electrical Specifications

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

(OFF)

g(TOT)

Gate Charge at 5V Q

Threshold Gate Charge Q

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

(ON)

g(5)

g(TH)

I

r

= 250mA, V

D

V

= V

GS

DS

V

= 40V, V

DS

T

= 150

C

V

10V, V

GS

I

= 16A, V

D

I

= 16A, V

D

V

= 25V, I

DD

V

5V, R

GS =

Figures 15, 16

= 0V, Figure 10 50 - - V

GS

, I

= 250mA, Figure 9 1 - 2 V

D

= 0V

GS

o

C

= 0V - - 100 nA

DS

= 5V - - 0.047

GS

= 4V - - 0.056

GS

= 8A,

D

= 12.5 Ω

GS

-- 1 µ A

--50 µ A

- - 60 ns

-14 - ns

-30 - ns

-42 - ns

f

-14 - ns

- - 100 ns

V

= 0V to 10V V

GS

V

= 0V to 5V - - 45 nC

GS

V

= 0V to 1V - - 3 nC

GS

JC

- - 100

JA

= 40V,

DD

I

= 16A,

D

R

= 2.5 Ω

L

Figures 17, 18

- - 80 nC

- - 2.083

o

o

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.

©2002 Fairchild Semiconductor Corporation RFD16N05L, RFD16N05LSM Rev. B

I

= 16A - - 1.5 V

SD

I

= 16A, dI

SD

/dt = 100A/ µ s - - 125 ns

SD

TC, CASE TEMPERATURE (oC)

I

D

, DRAIN CURRENT (A)

0

25 50 75 100 150

5

10

20

125

15

10

10

2

1

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

1100.01 0.10

tAV = (L)(IAS)/(1.3 RATED BV

DSS

- VDD)

If R = 0

If R ≠ 0
t

AV

= (L/R)ln[(IAS*R)/(1.3 RATED BV

DSS

- VDD) +1]

STARTING TJ = 25oC

STARTING TJ = 150oC

Idm

0 3.0 4.5 6.01.5

0

15

30

45

I

DS(ON)

, DRAIN TO SOURCE ON CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

DS

= 15V

RFD16N05L, RFD16N05LSM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

10

TC = 25oC

TJ = MAX RATED

ID MAX CONTINUOUS

10

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1

, DRAIN CURRENT (A)

D

I

0.1
1

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA

45

30

15

, DRAIN TO SOURCE CURRENT (A)

DS

I

0

0 1.5 3.0 4.5 7.5

OPERATION IN THIS AREA
LIMITED BY r

VGS = 10V

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 5V

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

6.0

DC

TC = 25oC

VGS = 3V

VGS = 2V

2

10

(SINGLE PULSE UIS SOA)

©2002 Fairchild Semiconductor Corporation RFD16N05L, RFD16N05LSM Rev. B

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS