Fairchild Semiconductor RFD16N03LSM Datasheet

SEMICONDUCTOR

December 1995

RFD16N03L,

RFD16N03LSM

16A, 30V, Avalanche Rated N-Channel Logic Level

Enhancement-Mode Power MOSFETs

Features

• 16A, 30V

•r

•

= 0.022Ω

DS(ON)

Temperature Compensating

PSPICE Model

• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• +175

C Operating Temperature

Description

The RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert­ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFD16N03L TO-251AA 16N03L
RFD16N03LSM TO-252AA 16N03L

Packaging

DRAIN (FLANGE)

Symbol

JEDEC TO-251AA

JEDEC TO-252AA

GATE

SOURCE

GATE

DRAIN

SOURCE

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N03LSM9A.

Formerly developmental type TA49030.

Absolute Maximum Ratings T

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Soldering Temperature of Leads for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1995

= +25oC

C

5-31

STG

RFD16N03LSM UNITS

DSS

DGR

GS

D

Refer to Peak Current Curve

DM

Refer to UIS Curve

, T

AS

D

J
L

RFD16N03L,

30 V
30 V

±10 V

16

90

0.606

-55 to +175
260

File Number 4013.1

A

W

W/oC

o

C

o

C

Specifications RFD16N03L, RFD16N03LSM

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I
On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Case R
Thermal Resistance Junction-to-Ambient R

DSS

GS(TH)

DSS

GSS

DS(ON)ID

ON

D(ON)

R

D(OFF)

F

OFF

G(TOT)

G(5)

G(TH)

ISS
OSS
RSS

θJC

θJA

ID = 250µA, VGS = 0V 30 - - V
VGS = VDS, ID = 250µA1-2V
VDS = 30V,

VGS = 0V

TC = +25oC--1µA

= +150oC--50µA

T

C

VGS = ±10V - - 100 nA

= 16A, VGS = 5V - - 0.022 Ω

VDD = 15V, ID = 16A,
RL = 0.93Ω, VGS = 5V,
RGS = 5Ω

- - 120 ns

-15-ns

-95-ns

-25-ns

-27-ns

- - 80 ns
VGS = 0V to 10V VDD = 24V,
VGS = 0V to 5V - 30 36 nC

ID = 16A,
RL = 1.5Ω

-5060nC

VGS = 0V to 1V - 1.5 1.8 nC
VDS = 25V, VGS = 0V,

f = 1MHz

- 1650 - pF

- 575 - pF

- 200 - pF

- - 1.65
TO-251 and TO-252 - - 100

o
o

C/W
C/W

Source-Drain Diode Specifications

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

RR

SD

ISD = 16A - - 1.5 V
ISD = 16A, dISD/dt = 100A/µs--75ns

5-32

Typical Performance Curves

RFD16N03L, RFD16N03LSM

500

TC = +25oC

2
1

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

DS(ON)

V

DSS

MAX = 30V

10

100µs

1ms

10ms
100ms

DC

50

0.5

0.2

0.1

0.1

, NORMALIZED

.05

JC

θ

.02

Z

THERMAL RESPONSE

.01

SINGLE PULSE

0.01

-5

10

10

t, RECTANGULAR PULSE DURATION (s)

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

-3

10

-2

10

-1

10

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

20

15

10

500

100

VGS = 10V

VGS = 5V

FOR TEMPERATURES
ABOVE +25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

175 - T

25

150

t

1

t

2

JC

θ

10

TC = +25oC

C

1/t2

0

+ T

C

1

10

, DRAIN CURRENT (A)

5

D

I

0

25 50 75 100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

100

VGS = 10V

75

50

, DRAIN CURRENT (A)

25

D

I

0

0

1.0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)

PULSE DURATION = 250µs, T

2.0 3.0 5.0

= +25oC

C

VGS = 5V

VGS = 4.5V

V

GS

VGS = 3.5V

VGS = 3V

4.0

= 4V

175

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

, PEAK CURRENT CAPABILITY (A)

DM

I

10

-5

10

-4

10

FIGURE 4. PEAK CURRENT CAPABILITY

100

75

50

25

, ON-STATE DRAIN CURRENT (A)

D(ON)

I

0

0

VGS, GATE-TO-SOURCE VOLTAGE (V)

-3

10

-2

10

t, PULSE WIDTH (s)

-55oC

PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX

3.0 4.5 6.0 7.51.5

-1

10

0

10

V

DD

= 15V

1

10

+175oC

+25oC

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS

FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

5-33