Fairchild Semiconductor RFD14N05, RFD14N05SM Datasheet

RFD14N05, RFD14N05SM, RFP14N05

Data Sheet January 2002

14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs

These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA09770.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD14N05 TO-251AA D14N05
RFD1 4N05SM TO-252AA D14N05
RFP14N05 TO-220AB RFP14N05

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.

Features

• 14A, 50V

• r

DS(ON)

= 0.100Ω

• Temperature Compensating PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN (FLANGE)

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

DRAIN (FLANGE)

©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1

RFD14N05, RFD14N05SM, RFP14N05

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD14N05, RFD14N05SM,

RFP14N05 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DSS

DGR

GS

DM

AS

J, TSTG

D

Refer to Peak Current Curve

D

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress on ly rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V
50 V

± 20 V

14

Refer to UIS Curve

48

0.32

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1.TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

R

DSSID

DSS

GSS

ON

r

f

OFF

g(10)VGS

g(TH)VGS

ISS
OSS
RSS

θJC

θJA

θJA

= 250µA, VGS = 0V (Figure 9) 50 - - V

= VDS, ID = 250µA 2 - 4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TC = 150oC - - 250 µA

DSS

VGS = ±20V - - ±100 nA

= 14A, VGS = 10V, (Figure 11) - - 0.100 Ω

VDD = 25V, ID ≈ 14A, VGS = 10V,
RGS = 25Ω, RL = 1.7Ω
(Figure 13)

- - 60 ns

- 14 - ns

- 26 - ns

- 45 - ns

- 17 - ns

- - 100 ns
= 0V to 20V VDD = 40V, ID = 14A,
= 0V to 10V - - 25 nC
= 0V to 2V - - 1.5 nC

RL = 2.86Ω
I

= 0.4mA

g(REF)

(Figure 13)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- - 40 nC

- 570 - pF

- 185 - pF

- 50 - pF

- - 3.125oC/W

TO-251 and TO-252 - - 100
TO-220 - - 80

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SDISD

rr

NOTES:

2.Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3.Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1

= 14A - - 1.5 V

ISD = 14A, dISD/dt = 100A/µs - - 125 ns

RFD14N05, RFD14N05SM, RFP14N05

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100 125

0

TC, CASE TEMPERATURE (oC)

150

FIGURE 1.NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

NORMALIZED

θJC,

Z

0.1

0.1

0.05

0.02

THERMAL IMPEDANCE

0.01

SINGLE PULSE

0.01

-5

10

10

-4

-3

10

t, RECTANGULAR PULSE DURATION (s)

16

12

8

, DRAIN CURRENT (A)

4

D

I

1750

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

175

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

2

x R

JA

θ

0

10

+ T

JA

A

θ

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

, DRAIN CURRENT (A)
I

100

D

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

DS(ON)

10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED
SINGLE PULSE

TC = 25oC

100µs

1ms

10ms

DC

100ms

VGS = 20V

100

TRANSCONDUCTANCE

, PEAK CURRENT CAPABILITY (A)

MAY LIMIT CURRENT
IN THIS REGION

DM

I

10

-5

10

-4

10

VGS = 10V

-3

10

t, PULSE WIDTH (s)

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

175T

–

10

-2



II

=



25



-1

10

---------------------

150

10

C

0

10

FIGURE 4.FORWARD BIAS SAFE OPERATING AREA FIGURE 5.PEAK CURRENT CAPABILITY

©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1

1