Fairchild Semiconductor RFD10P03LSM Datasheet

G

D

S

GATE

SOURCE

DRAIN (FLANGE)

RFD10P03L, RFD10P03LSM, RFP10P03L

Data Sheet January 2002

10A, 30V, 0.200 Ohm, Logic Level,
P-Channel Power MOSFET

These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA49205.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD10P03L TO-251AA 10P03L

RFD10P03LSM TO-252AA 10P03L

RFP10P03L TO-220AB F10P03L

NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the

TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..

Packaging

JEDEC TO-251AA JEDEC TO-252AA

Features

• 10A, 30V

DS(ON)

= 0.200 Ω

•r

• Temperature Compensating PSPICE

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• 175

C Operating Temperature

Symbol

®

Model

SOURCE

DRAIN (FLANGE)

©2002 Fairchild Semiconductor Corporation RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

±

µ

µ

±

Ω

Ω

≅

≅

θ

θ

RFD10P03L, RFD10P03LSM, RFP10P03L

Absolute Maximum Ratings

o

T

= 25

C Unless Otherwise Specifie

C

RFD10P03L, RFD10P03LSM,

RFP10P03L UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20K Ω) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

-30 V

-30 V
10 V

Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

(0.063in (1.6mm) from case for 10s)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

D

DM

AS

D

, T

J

STG

L

10

See Figure 5

Refer to UIS Curve

65

0.43

-55 to 175
300

W/

A

W

o

C

o

C

o

C

NOTE:

J

= 25

o

C to 150

1. T

Electrical Specifications

o

C

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance
(Note 1)

r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at -5V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

ON

r

f

OFF

g(-5)

g(TH)

ISS

OSS

RSS

JC

JA

I

= 250 µ A, V

D

V

= V

GS

DS

V

= -30V, T

DS

V

= 0V T

GS

V

= ± 10V - -

GS

I

= 10A, V

D

I

= 10A, V

D

V

= 15V, I

DD

R

= 5 Ω, V

GS

(Figure 13)

= 0V (Figure 11) -30 - - V

GS

, I

= 250 µ A (Figure 12) -1 - -2 V

D

o

= 25

C---1

C

o

= 150

C

C - - -50

100 nA

= -5V (Figures 9, 10) - - 0.200

GS

= -4.5V (Figures 9, 10) 0.220

GS

D
GS

10A, R

= -5V

= 1.5 Ω ,

L

- - 100 ns

-15- ns

-50- ns

-35- ns

-20- ns

- - 80 ns

V

= 0 to -10V V

GS

V

= 0 to -5V - 13 16 nC

GS

V

= 0 to -1V - 1.2 1.5 nC

GS

V

= -25V, V

DS

GS

(Figure 15)

= -24V, I

DD

R

= 2.4 Ω

L

I

= -0.25mA

g(REF)

(Figure 14)

= 0V, f = 1MHz

10A,

D

-2530nC

- 1035 - pF

- 340 - pF

-35-pF

- - 2.30

RFD10P03L, RFD10P03LSM - - 100

RFP10P03L 80

o

o

o

A

A

C/W

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Forward Voltage V

Reverse Recovery Time t

SD

rr

NOTE:

2. Pulse Test: Pulse width ≤ 300 µ s, Duty Cycle ≤ 2%.

©2002 Fairchild Semiconductor Corporation RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B

I

= -10A - - -1.5 V

SD

I

= -10A, dI

SD

/dt = -100A/ µ s--75ns

SD

-4

-2

0

25 50 75 100

125

150

-8

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

-12

-6

175

-10

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

-10

t, PULSE WIDTH (s)

I

DM

,

PEAK CURRENT CAPABILITY (A)

VGS = -10V

VGS = -5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

-5

II

25

175 T

C

–

150

------------------------







=

TC = 25oC

-100

RFD10P03L, RFD10P03LSM, RFP10P03L

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125 150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2.0

1.0

0.5

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED THERMAL IMPEDANCE

θJC

Z

0.01
10

-100

-10

DRAIN CURRENT (A)
,

D

I

©2002 Fairchild Semiconductor Corporation RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-1

-1 -10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-5

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

V

MAX = -30V

DSS

V

DS,

DRAIN TO SOURCE VOLTAGE (V)

10

TJ = MAX RATED
TC = 25oC

100µs

1ms

10ms

100ms

DC

-3

t, RECTANGULAR PULSE DURATION (s)

-100

-2

10

NOTES: DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-1

10

P

DM

t

1

t

2

2

+ T

x R

θ

θJC

JC

C

0

10

1

10