Fairchild Semiconductor RF1S70N06, RF1S70N06SM Datasheet

RFG70N06, RFP70N06,

SEMICONDUCTOR

RF1S70N06, RF1S70N06SM

December 1995

Features

• 70A, 60V

•r

•

= 0.014Ω

DS(on)

Temperature Compensated

PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

o

• +175

C Operating Temperature

Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli­cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFG70N06 TO-247 RFG70N06
RFP70N06 TO-220AB RFP70N06
RF1S70N06 TO-262AA F1S70N06
RF1S70N06SM TO-263AB F1S70N06

NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.

Formerly developmental type TA49007.

70A, 60V, Avalanche Rated, N-Channel

Enhancement-Mode Power MOSFETs

Packages

JEDEC STYLE TO-247

SOURCE

DRAIN

DRAIN

GATE

DRAIN

GATE

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

JEDEC TO-262AA

SOURCE

A

Symbol

G

Absolute Maximum Ratings T

Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation

TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright

© Harris Corporation 1995

D

S

= +25oC, Unless Otherwise Specified

C

3-51

STG

DSS

DGR

GS

DM

AS

, T

JEDEC TO-263AB

GATE
SOURCE

RFG70N06, RFP70N06

RF1S70N06, RF1S70N06SM UNITS

D

Refer to Peak Current Curve

Refer to UIS Curve

D

J

-55 to +175

A

M

A

DRAIN

(FLANGE)

60 V
60 V

±20 V

70

150

1.0

W/oC

File Number

A

W

o

C

3206.3

Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I
On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSS

GS(TH)

DSS

GSS

DS(ON)

ON

D(ON)

R

D(OFF)

F

OFF

G(TOT)

G(10)

G(TH)

ISS

OSS

RSS

θJC

θJA

ID = 250µA, VGS = 0V 60 - - V
VGS = VDS, ID = 250µA2-4V
VDS = 60V,

TC = +25oC- - 1µA

VGS = 0V

T

= +150oC- - 50µA

C

VGS = ±20V - - 100 nA
ID = 70A, VGS = 10V - - 0.014 Ω
VDD = 30V, ID = 70A

- - 125 ns
RL = 0.43Ω, VGS = +10V
RGS = 2.5Ω

-12-ns

-50-ns

-40-ns

-15-ns

- - 125 ns
VGS = 0V to 20V VDD = 48V,

- 185 215 nC

ID = 70A,

VGS = 0V to 10V - 100 115 nC

RL = 0.68Ω

VGS = 0V to 2V - 5.5 6.5 nC
VDS = 25V, VGS = 0V

- 3000 - pF
f = 1MHz

- 900 - pF

- 300 - pF

- - 1.0

--80

o

C/W

o

C/W

Source-Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

RR

SD

ISD = 70A - - 1.5 V
ISD = 70A, dISD/dt = 100A/µs - - 125 ns

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