Fairchild Semiconductor RF1S70N03 Datasheet
RFP70N03, RF1S70N03,
SEMICONDUCTOR
December 1995
Features
• 70A, 30V
•r
•
= 0.010Ω
DS(ON)
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
o
• +175
C Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFP70N03 TO-220AB RFP70N03
RF1S70N03 TO-262AA F1S70N03
RF1S70N03SM TO-263AB F1S70N03
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
RF1S70N03SM
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
DRAIN
(FLANGE)
Symbol
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-220AB
JEDEC TO-262AA
A
JEDEC TO-263AB
A
M
A
G
D
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Formerly developmental type TA49025.
Absolute Maximum Ratings T
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Above TC = +25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
= +25oC, Unless Otherwise Specified
C
3-45
RFP70N03, RF1S70N03,
DSS
DGR
GS
D
DM
(Refer to UIS Curve)
AS
D
T
STG
S
RF1S70N03SM UNITS
30 V
30 V
±20 V
70 A
200 A
150 W
1.0 W/oC
-55 to +175
o
C
File Number 3404.2
Specifications RFP70N03, RF1S70N03, RF1S70N03SM
Electrical Specifications At Case Temperature (T
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate-Source Leakage Current I
On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 10V Q
DSS
GS(TH)
DSS
GSS
DS(ON)
ON
D(ON)
R
D(OFF)
F
OFF
G(TOT)
G(10)
) = +25oC, Unless Otherwise Specified
C
ID = 250µA, VGS = 0V 30 - - V
VGS = VDS, ID = 250µA2-4V
VDS=30V TC = 25oC--1µA
V
= 0V TC = 150oC--50µA
GS
VGS = ±20V - - 100 nA
ID = 70A, VGS = 10V - - 0.010 Ω
VDD = 15V, ID = 70A - - 80 ns
RL = 0.214Ω, VGS = +10V - 20 - ns
RGS = 2.5Ω -20-ns
-40-ns
-25-ns
- - 125 ns
VGS = 0 to 20V VDD = 24V,
- 215 260 nC
ID = 70A,
VGS = 0 to 10V - 120 145 nC
RL = 0.343Ω
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Diode
R
G(TH)
ISS
OSS
RSS
θJC
θJA
VGS = 0 to 2V - 6.5 8.0 nC
VDS = 25V, VGS = 0V - 3300 - pF
f = 1MHz - 1750 - pF
Junction to Ambient
Source-Drain Diode Ratings and Specifications
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Diode Forward Voltage V
Reverse Recovery Time t
SD
RR
ISD = 70A - - 1.5 V
ISD = 70A, dISD/dt = 100A/µs - - 125 ns
- 750 - pF
- - 1.0
--80
o
C/W
o
C/W
3-46
Loading...