Fairchild Semiconductor RF1S45N06 Datasheet

RFG45N06, RFP45N06,

SEMICONDUCTOR

RF1S45N06, RF1S45N06SM

December 1995

Features

• 45A, 60V

•r

•

= 0.028Ω

DS(ON)

Temperature Compensating

PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• +175

C Operating Temperature

Description

The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch­ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFG45N06
RFP45N06
RF1S45N06
RF1S45N06SM

NOTE: When ordering, use the entire part number. Add the suf fix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A.

Formerly developmental type TA49028.

Symbol

TO-247 RFG45N06
TO-220AB RFP45N06
TO-262AA F1S45N06
TO-263AB F1S45N06

D

G

45A, 60V, Avalanche Rated N-Channel

Enhancement-Mode Power MOSFETs

Packages

JEDEC STYLE TO-247

SOURCE

DRAIN

DRAIN

GATE

GATE

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE
SOURCE

JEDEC TO-220AB

JEDEC TO-262AA

A

JEDEC TO-263AB

A

M

A

SOURCE

SOURCE

DRAIN

DRAIN

(FLANGE)

S

Absolute Maximum Ratings T

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Maximum Avalanche Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation

= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

C

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright

© Harris Corporation 1995

= +25oC

C

3-33

STG

DSS

DGR

GS

DM

AS

AM

, T

RFG45N06, RFP45N06

RF1S45N06, RF1S45N06SM UNITS

D

Refer to Peak Current Curve

Refer to UIS Curve

D

T

J

60 V
60 V

±20 V

45

125 A

131

0.877

-55 to +175

File Number 3574.2

A

W

W/oC

o

C

Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I

On Resistance r

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

Total Gate Charge Q

Gate Charge at 10V Q

DSS

GS(TH)

DSS

GSS

DS(ON)

ON

D(ON)

R

D(OFF)

F

OFF

G(TOT)

G(10)

ID = 250µA, VGS = 0V 60 - - V

VGS = VDS, ID = 250µA2-4V

VDS = 60V,

TC = +25oC--1µA

VGS = 0V

T

= +150oC- -50µA

C

VGS = ±20V - - 100 nA

ID = 45A, VGS = 10V - - 0.028 Ω

VDD = 30V, ID = 45A

- - 120 ns
RL = 0.667Ω, VGS = +10V
RGS = 3.6Ω

-12- ns

-74- ns

-37- ns

-16- ns

- - 80 ns

VGS = 0 to 20V VDD = 48V,

- 125 150 nC

ID = 45A,

VGS = 0 to 10V - 67 80 nC

RL = 1.07Ω

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

Source-Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V

Reverse Recovery Time t

SD

RR

G(TH)

ISS

VGS = 0 to 2V - 3.7 4.5 nC

VDS = 25V, VGS = 0V

- 2050 - pF
f = 1MHz

OSS

RSS

θJC

θJA

- 600 - pF

- 200 - pF

- - 1.14

--80

ISD = 45A - - 1.5 V

ISD = 45A, dISD/dt = 100A/µs - - 125 ns

o

C/W

o

C/W

3-34