Fairchild Semiconductor RF1S40N10, RF1S40N10SM, RFG40N10, RFP40N10 Datasheet

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RFG40N10, RFP40N10, RF1S40N10,

RF1S40N10SM

Data Sheet January 2002

40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs

These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA9846

Ordering Information

PART NUMBER PACKAGE BRAND

RFG40N10 TO-247 RFG40N10

RFP40N10 TO-220AB RFP40N10

RF1S40N10 TO-262AA F1S40N10

RF1S40N10SM TO-263AB F1S40N10

NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.

Features

• 40A, 100V

•r

DS(ON)

= 0.040 Ω

• UIS Rating Curve

• SOA is Power Dissipation Limited

o

• 175

C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

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JEDEC TO-263AB JEDEC TO-262AA

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©2002 Fairchild Semiconductor Corporation RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C

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±

µ

µ

±

Ω

θ

θ

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFG40N10, RFP40N10,

RF1S40N10, RF1S40N10SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 1M Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

100 V

100 V

20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

D

DM

AS

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

40

100

Figures 4, 12, 13

160

1.07

-55 to 175

300
260

W/

A
A

W

o

C

o

C

o

C

o

C

NOTES:

1. T

= 25

J

o

C to 150

o

C.

2. Repetitive Rating: pulse width limited by maximum junction temperature.

Electrical Specifications

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at 10V Q

Threshold Gate Charge Q

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

JC

JA

I

= 250 µ A, V

D

V

= V

GS

DS

V

= 80V,

DS

V

= 0V

GS

V

= ± 20V - -

GS

I

= 40A, V

D

V

= 50V, I

DD

R

= 2.5 Ω , V

L

(Figure 11)

= 0V (Figure 9) 100 - - V

GS

, I

= 250 µ A (Figure 8) 2 - 4 V

D

o

T

= 25

C--1

C

= 150

C

o

C--50

T

100 nA

= 10V (Figure 7) - - 0.040

GS

= 20A,

D

= 10V, R

GS

= 4.2 Ω

GS

- - 80 ns

-17- ns

-30- ns

-42- ns

-20- ns

- - 100 ns

V

= 0V to 20V V

GS

V

= 0V to 10V - - 150 nC

GS

V

= 0V to 2V - - 7.5 nC

GS

= 80V,

DD

I

= 40A,

D

R

= 2.0 Ω

L

(Figures 11)

- - 300 nC

- - 0.94

TO-247 - - 30

TO-220AB and TO-263AB - - 62

o

o

o

A

A

C/W

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t

©2002 Fairchild Semiconductor Corporation RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C

I

= 40A - - 1.5 V

SD

I

rr

= 40A, dI

SD

/dt = 100A/ µ s - - 200 ns

SD