Fairchild Semiconductor RF1S30N06LE Datasheet
July 1995
RFP30N06LE, RF1S30N06LE,
SEMICONDUCTOR
RF1S30N06LESM
30A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Features
• 30A, 60V
DS(ON)
= 0.047Ω
•r
• 2kV ESD Protected
Temperature Compensating
•
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM
are N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFP30N06LE TO-220AB F30N06LE
RF1S30N06LE TO-262AA 1S30N06L
RF1S30N06LESM TO-263AB 1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Formerly developmental type TA49027.
Packages
DRAIN
(FLANGE)
DRAIN
(FLANGE)
Symbol
GATE
SOURCE
G
JEDEC TO-220AB
JEDEC TO-262AA
A
JEDEC TO-263AB
A
M
A
D
S
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Absolute Maximum Ratings T
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . ESD 2 kV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Copyright © Harris Corporation 1995
= +25oC
C
STG
DSS
DGR
GS
DM
AS
, T
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM UNITS
60 V
60 V
+10, -8 V
D
Refer to Peak Current Curve
D
J
L
30
Refer to UIS Curve
96
0.645
-55 to +175
260
File Number
5-45
A
W
W/oC
o
C
o
C
3629.1
Specifications RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate-Source Leakage Current I
On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
GS(TH)VGS
DSS
VDS = 60V,
VGS = 0V
GSS
DS(ON)ID
ON
VGS = +10, -8V - - 10 µA
VDD = 30V, ID = 30A,
RL = 1Ω, VGS = 5V,
D(ON)
D(OFF)
OFF
G(TOT)VGS
G(5)
G(TH)
ISS
RGS = 2.5Ω
R
F
VGS = 0V to 5V - 28 34 nC
VGS = 0V to 1V - 1.8 2.6 nC
VDS = 25V, VGS = 0V,
f = 1MHz
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V 60 - - V
= VDS, ID = 250µA1-2V
TC = +25oC--1µA
T
= +150oC--50µA
C
= 30A, VGS = 5V - - 0.047 Ω
- - 140 ns
-11-ns
-88-ns
-30-ns
-40-ns
- - 100 ns
= 0V to 10V VDD = 48V,
-5162nC
ID = 30A,
RL = 1.6Ω
- 1350 - pF
- 290 - pF
-85-pF
- - 1.55
--80
o
C/W
o
C/W
Source-Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
RR
SD
ISD = 30A - - 1.5 V
ISD = 30A, dISD/dt = 100A/µs - - 125 ns
5-46
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