Fairchild Semiconductor RF1S25N06 Datasheet
G
D
S
DRAIN
(FLANGE)
GATE
SOURCE
RFP25N06, RF1S25N06, RF1S25N06SM
Data Sheet January 2002
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP25N06 TO-220AB RFP25N06
RF1S25N06 TO-262AA F1S25N06
RF1S25N06SM TO-263AB F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.
Features
• 25A, 60V
DS(ON)
= 0.047 Ω
®
Model
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
• 175
C Operating Temperature
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
DRAIN
(FLANGE)
JEDEC TO- 220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
JEDEC TO-262AA
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
±
µ
µ
= ±
±
Ω
θ
θ
RFP25N06, RF1S25N06, RF1S25N06SMS
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
C
RFP25N06,
RF1S25N06, RF1S25N06SM UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
DSS
DGR
GS
D
DM
AS
D
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
20 V
25
(Figure 5)
(Figure 6)
72
0.48
-55 to 175
300
260
W/
A
W
o
C
o
C
o
C
o
C
NOTE:
J
= 25
o
C to 150
1. T
Electrical Specifications
o
C.
o
T
= 25
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSS
GSS
OFF
g(10)
g(TH)
OSS
RSS
I
DSS
ON
r
= 250 µ A, V
D
V
= V
GS
DS
V
= 60V T
DS
V
= 0V T
GS
V
I
V
R
R
20V - -
GS
= 25A, V
D
= 30V, I
DD
= 2.4 Ω , V
L
= 10 Ω
GS
(Figure 13)
= 0V (Figure 11) 60 - - V
GS
, I
= 250 µ A (Figure 10) 2 - 4 V
D
o
= 25
C--1
C
o
= 150
C
= 10V (Figure 9) - - 0.047
GS
= 12.5A
D
= 10V
GS
C--50
- - 60 ns
-14-ns
-30-ns
-45-ns
f
-22-ns
- - 100 ns
V
ISS
= 0 to 20V V
GS
V
= 0 to 10V - - 45 nC
GS
V
= 0 to 2V - - 3 nC
GS
V
= 25V, V
DS
GS
f = 1MHz
(Figure 12)
DD
R
L
I
g(REF)
(Figure 13)
= 0V
= 48V, I
= 1.92 Ω
= 0.75mA
= 25A,
D
- - 80 nC
- 975 - pF
- 330 - pF
-95-pF
(Figure 3) - - 2.083
JC
JA
--62
100 nA
o
C/W
o
C/W
A
A
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
SD
rr
I
= 25A - - 1.5 V
SD
I
= 25A, dI
SD
/dt = 100A/ µ s - - 125 ns
SD
5
0
25 50 75 100
125
150
20
I
D
, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
175
25
30
15
10
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
, PEAK CURRENT (A)
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
II
25
175 T
C
–
150
------------------------
=
VGS = 10V
TC = 25oC
RFP25N06, RF1S25N06, RF1S25N06SM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
025
50
TC, CASE TEMPERATURE (oC)
75 100
Unless Otherwise Specified
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
0.5
150
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.2
0.1
0.1
, NORMALIZED
Z
200
100
10
, DRAIN CURRENT (A)
D
I
1
1
0.05
JC
0.02
θ
0.01
THERMAL IMPEDANCE
0.01
-5
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
DS
SINGLE PULSE
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC = 25oC
T
J
SINGLE PULSE
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
10
-3
10
t1, RECTANGULAR PULSE DURATION (s)
= MAX RATED
100µs
1ms
10ms
100ms
DC
100
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
P
DM
t
1
t
2
1/t2
x R
C
J
θ
0
10
+ T
C
J
C
θ
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
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