Fairchild Semiconductor RF1K49223 Datasheet
Data Sheet January 2002
RF1K49223
2.5A, 30V, 0.150 Ohm, Dual P-Channel
LittleFET™ Power MOSFET
The RF1K49223 Dual P-Channel power MOSFET is
manufac tu red usi ng an advanced MegaFET pr oc ess. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilizati on of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches . This device can be op erated directly from
integrated circuits.
Formerly developmental type TA49223.
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49223 MS-012AA RF1K49223
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4922396.
Features
•2.5A, 30V
•r
• Temperature Compensating PSPICE
DS(ON)
= 0.150Ω
®
Model
• Thermal Impedance PSPICE Model
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines f or Soldering Surface Mount
Components to PC Boards”
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
D2(6)
D2(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
S2(3)
G2(4)
5
3
4
©2002 Fairchild Semiconductor Corpo ration RF1K49223 Rev. B
RF1K49223
Absolute Maximum Ratings
TA= 25oC Unless Otherwise Specified
RF1K49223 UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
-30 V
-30 V
±20 V
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
J
STG
DM
AS
D
D
Refer to Peak Current Curve
2.5
Refer to UIS Curve
2
0.016
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. T
= 25oC to 125oC.
J
Electrical Specifications
TA = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at -10V Q
Threshold Gate Charge Q
DSSID
DSS
GSS
ON
r
f
OFF
g(-10)
g(TH)
= 250µA, VGS = 0V, (Figure 12) -30 - - V
= VDS, ID = 250µA, (Figure 11) -1 - -3 V
VDS = -30V,
V
= 0V
GS
= 25oC---1µA
T
A
= 150oC---50µA
T
A
VGS = ±20V - - ±100 nA
= 2.5A,
(Figure 9, 10)
VDD = -15V, ID ≅ 2.5A,
R
= 6Ω, VGS = -10V,
L
= 25Ω
R
GS
VGS = -10V - - 0.150 Ω
V
= -4.5V - - 0.360 Ω
GS
- - 40 ns
-9-ns
-19-ns
-60-ns
-34-ns
- - 140 ns
= 0V to -20V VDD = -24V,
I
≅ 2.5A,
VGS = 0V to -10V - 15 19 nC
VGS = 0V to -2V - 1.5 1.9 nC
D
= 9.6Ω
R
L
I
g(REF)
= -1.0mA
-2835nC
(Figure 14)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R
ISS
OSS
RSS
θJA
VDS = -25V, VGS = 0V,
f = 1MHz
(Figure 13)
Pulse Width = 1s
- 580 - pF
- 260 - pF
-38-pF
- - 62.5
o
C/W
Device mounted on FR-4 material
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Reverse Recovery Time t
©2002 Fairchild Semiconductor Corpo ration RF1K49223 Rev. B
ISD = -2.5A - - -1.25 V
ISD =-2.5A, dISD/dt = 100A/µs--49ns
rr
Typical Performance Curves
0
0
I
, DRAIN CURRENT (A)
0
RF1K49223
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 15
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
1
0.05
0.02
0.01
0.1
, NORMALIZED
JA
θ
Z
0.01
THERMAL IMPEDANCE
0.001
-5
10
SINGLE PULSE
-4
10
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
-3.0
-2.5
-2.0
-1.5
-1.0
D
-0.5
0
25
50
75 100 125 15
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
P
DM
t
1
t
JA
1/t2
10
x R
2
2
JA
θ
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
θ
+ T
A
3
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-50
-10
-1
, DRAIN CURRENT (A)
-0.1
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
-0.01
-0.1
DS(ON)
V
DSS(MAX)
= -30V
-1 -10
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
TJ = MAX RATED
TA = 25oC
5ms
10ms
100ms
1s
DC
-10
-100
VGS = -20V
VGS = -10V
-10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
, PEAK CURRENT (A)
IN THIS REGION
DM
I
-1
-5
10
TA = 25oC
-4
10
-3
10
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
-2
10
150 - T
I
25
10
A
125
-1
10
0
1
10
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corpo ration RF1K49223 Rev. B
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