Fairchild Semiconductor RF1K49211 Datasheet

Data Sheet January 2002

RF1K49211

7A, 12V, 0.020 Ohm, Logic Level, Single
N-Channel LittleFET™ Power MOSFET

The RF1K49211 Single N-C ha nne l power MOSFET is
manufac tu red usi ng an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilizati on of silicon,
resulting in outstanding performance. It was designed for
use in applications such as s w it ch ing regulators, switching
converters, motor drivers, relay drivers, and low-voltage bus
switches . This product achieves full-rated conduction at a
gate bias in the 3V - 5V range, thereby facil ita ting true on-off
power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49211.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49211 MS-012AA RF1K49211

NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4921196.

Features

•7A, 12V

•r

• Temperature Compensating PSPICE

DS(ON)

= 0.020Ω

®

Model

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines f or Soldering Surface Mount
Components to PC Boards”

Symbol

NC(1)

SOURCE(2)

SOURCE(3)

GATE(4)

DRAIN(8)

DRAIN(7)

DRAIN(6)

DRAIN(5)

Packaging

JEDEC MS-012AA

BRANDING DASH

5

1

2

3

4

©2002 Fairchild Semiconductor Corpo ration RF1K49211 Rev. B

RF1K49211

Absolute Maximum Ratings

TA = 25oC Unless Otherwise Specified

RF1K49211 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (Rgs = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

12 V
12 V

±10 V

Drain Current

Continuous (Pulse Width = 1s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

DM

AS

D

Refer to Peak Current Curve

Refer to UIS Curve

D

7

2

0.016

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied

L

pkg

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. T

= 25oC to 125oC.

J

Electrical Specifications

TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJA

= 250µA, VGS = 0V, (Figure 13) 12 - - V

= VDS, ID = 250µA, (Figure 12) 1 - 2 V

VDS = 12V,

= 0V

V

GS

T

= 25oC--1µA

A

= 150oC--50µA

T

A

VGS = ±10V - - 100 nA

= 7A, VGS = 5V, (Figures 9, 11) - - 0.020 Ω

VDD = 6V, ID ≅ 7A,

= 0.86Ω, VGS = 5V,

R

L

R

= 25Ω

GS

- - 250 ns

-50-ns

- 150 - ns

- 120 - ns

- 160 - ns

- - 350 ns

= 0V to 10V VDD = 9.6V,

≅ 7A,

I

VGS = 0V to 5V - 35 45 nC
VGS = 0V to 1V - 2 2.5 nC

D

R

= 1.37Ω

L

I

= 1.0mA

g(REF)

(Figure15)

VDS = 12V, VGS = 0V,
f = 1MHz
(Figure 14)

-6075nC

- 1850 - pF

- 1600 - pF

- 600 - pF

Pulse Width = 1s

- - 62.5

o

C/W

Device mounted on FR-4 material

Source to Drain Diode Specifications

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t

©2002 Fairchild Semiconductor Corpo ration RF1K49211 Rev. B

ISD = 7A - - 1.25 V
ISD = 7A, dISD/dt = 100A/µs--95ns

rr

Typical Performance Curves

0

RF1K49211

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 15

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

1

0.05

0.02

0.01

0.1

8

6

4

, DRAIN CURRENT (A)

2

D

I

0

25

50

75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

P

DM

IMPEDANCE

, NORMALIZED THERMAL

0.01

JA

θ

Z

0.001

100

10

1

, DRAIN CURRENT (A)

D

0.1

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.01

0.1

SINGLE PULSE

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

V

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

DSS(MAX)

11050

-3

10

TJ = MAX RATED
T

= 25oC

A

5ms
10ms

100ms

1s

DC

= 12V

-2

10

-1

10

0

10

t1, RECTANGULAR PULSE DURATION (s)

300

100

VGS = 5V

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT

, PEAK CURRENT (A)

IN THIS REGION

DM

I

1

-5

10

10

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

10

TA = 25oC

-4

-3

10

2

1/t2

JA

θ

1

FOR TEMPERATURES
ABOVE 25

2

10

o

CURRENT AS FOLLOWS:

I

I

=

25

-2

10

-1

10

x R

+ T

JA

A

θ

3

10

C DERATE PEAK

150 - T

A

125

0

10

1

10

t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERAT ING AREA FIGURE 5. PEAK CURRE NT CAPABILITY

©2002 Fairchild Semiconductor Corpo ration RF1K49211 Rev. B