Fairchild Semiconductor RF1K49157 Datasheet
SEMICONDUCTOR
RF1K49157
6.3A, 30V, Avalanche Rated, Single N-Channel
January 1997
LittleFET™ Enhancement Mode Power MOSFET
Features
• 6.3A, 30V
DS(ON)
= 0.030Ω
PSPICE Model
•r
Temperature Compensating
•
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49157 MS-012AA RF1K49157
NOTE: When ordering, use the entire part number. For ordering in tape
and reel, add the suffix 96 to the part number, i.e.,RF1K4915796.
Description
The RF1K49157 Single N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It was designed for
use in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49157.
Symbol
NC (1)
SOURCE (2)
DRAIN (8)
DRAIN (7)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
SOURCE (3)
GATE (4)
5
3
4
DRAIN (6)
DRAIN (5)
LittleFET™ is a trademerk of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
5-64
File Number 4012.4
RF1K49157
Absolute Maximum Ratings TA = 25
o
C Unless Otherwise Specified
RF1K49157 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
30 V
30 V
±20 V
Drain Current
Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
D
Refer to Peak Current Curve
DM
AS
6.3
Refer to UIS Curve
A
Power Dissipation
TA = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
STG
, T
J
L
2
0.016
-55 to 150
260
W
W/oC
o
C
o
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V 30 - - V
= VDS, ID = 250µA1-3V
VDS = 30V,
TA = 25oC--1µA
VGS = 0V
T
= 150oC--50µA
A
Gate to Source Leakage Current I
On Resistance r
Turn-On Time t
GSS
DS(ON)ID
ON
VGS = ±20V - - 100 nA
= 6.3A VGS = 10V - - 0.030 Ω
V
= 4.5V - - 0.060 Ω
GS
VDD = 15V, ID = 6.3A,
- - 85 ns
RL = 2.38Ω, VGS = 10V,
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
RGS = 25Ω
r
f
OFF
= 0V to 20V VDD = 24V,
-22-ns
-43-ns
- 125 - ns
-85-ns
- - 265 ns
-7088nC
ID = 6.3A,
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
g(10)
g(TH)
ISS
VGS = 0V to 10V - 38 48 nC
RL = 3.81Ω
VGS = 0V to 2V - 2.8 3.5 nC
VDS = 25V, VGS = 0V,
- 1575 - pF
f = 1MHz
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Ambient R
OSS
RSS
JA
θ
Pulse width = 1s
Device mounted on FR-4 material
- 700 - pF
- 200 - pF
- - 62.5
o
C/W
Source to Drain Diode Ratings and Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
ISD = 6.3A - - 1.25 V
ISD = 6.3A, dISD/dt = 100A/µs--60ns
rr
5-65
Typical Performance Curves
RF1K49157
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0.0
0 25 50 75 100 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
1
0.01
, NORMALIZED
0.1
θJA
Z
THERMAL IMPEDANCE
0.01
-3
10
NOTES:
SINGLE PULSE
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
0
10
t, RECTANGULAR PULSE DURATION (s)
P
DM
1/t2
x R
JA
θ
1
10
125
t
1
7.0
6.0
5.0
4.0
3.0
2.0
, DRAIN CURRENT (A)
D
I
1.0
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERA TURE
100
10
1
t
2
+ T
JA
A
θ
2
10
, DRAIN CURRENT (A)
D
I
0.01
3
10
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
DS(ON)
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED, TA = 25oC
V
MAX = 30V
DSS
5ms
10ms
100ms
1s
DC
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
300
100
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
, PEAK CURRENT CAPABILITY (A)
I = I
I
DM
25
1
-5
10
10
o
C DERATE PEAK
150 - T
-4
VGS = 20V
VGS = 10V
A
125
-3
10
10
t, PULSE WIDTH (s)
TA = 25oC
-2
-1
10
0
10
FIGURE 5. PEAK CURRENT CAPABILITY NOTE: Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
50
10
, AVALANCHE CURRENT (A)
AS
I
1
10
1
0.1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
STARTING TJ = 150oC
1 10 100
tAV, TIME IN AVALANCHE (ms)
- VDD)
DSS
DSS
STARTING TJ = 25oC
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
5-66
- VDD) +1]
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