Fairchild Semiconductor RF1K49156 Datasheet

RF1K49156

Data Sheet January 2002

6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET™ Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49156.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49156 MS-012AA RF1K49156

NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the sufﬁx 96 to the part number, i.e., RF1K4915696.

Features

• 6.3A, 30V

•r

• Temperature Compensating PSPICE

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.030 Ω

DS(ON)

Components to PC Boards”

®

Model

Symbol

NC (1)

SOURCE (2)

SOURCE (3)

DRAIN (8)

DRAIN (7)

DRAIN (6)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

GATE (4)

5

3

4

DRAIN (5)

± 10

µ

±

Ω

≈

RF1K49156

Absolute Maximum Ratings

o

T

= 25

C Unless Otherwise Speciﬁed

A

RF1K49156 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20k Ω , Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V

V

Drain Current

Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation

o

T

= 25

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

A

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

D

DM

AS

D

, T

J

STG

Refer to Peak Current Curve

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

L

pkg

6.3

Refer to UIS Curve

2

0.016

-55 to 150

300 260

W/

A

W

o

C

o

C

o

C

o

C

NOTE:

= 25

J

o

C to 125

1. T

Electrical Speciﬁcations

o

C.

o

T

= 25

C, Unless Otherwise Speciﬁed

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Ambient R

DSS

GSS

ON

OFF

g(5)

g(TH)

ISS

OSS

RSS

θ

I

= 250 µ A, V

r

f

D

V

= V

GS

V

= 30V,

DS

V

= 0V

GS

V

= ± 10V - -

GS

I

= 6.3A, V

D

V

= 15V, I

DD

R

= 2.38 Ω , V

L

R

= 25 Ω

GS

(Figure 10)

V

= 0V to 10V V

GS

V

= 0V to 5V - 29 37 nC

GS

V

= 0V to 1V - 1.8 2.3 nC

GS

V

= 25V, V

DS

GS

, I

= 250 µ A, (Figure 12) 1 - 2 V

DS

D

= 5V, (Figures 9, 11) - - 0.030

GS

D

GS

f = 1MHz (Figure 14)

Pulse Width = 1s

JA

Device Mounted on FR-4 Material

= 0V, (Figure 13) 30 - - V

o

T

= 25

C--1

A

= 150

A

o

C--50 µ A

T

100 nA

6.3A, = 5V,

- - 165 ns

-35-ns

- 100 - ns

- 150 - ns

-95-ns

- - 300 ns

DD

I

= 6.3A,

D

R

= 3.81 Ω

L

= 24V,

-5265nC

(Figure 15)

= 0V,

- 2030 - pF

- 625 - pF

- 105 - pF

- - 62.5

o

A

C/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t

I

= 6.3A - - 1.05 V

SD

I

rr

= 6.3A, dI

SD

/dt = 100A/ µ s--58ns

SD

Typical Performance Curves

2

1

0

25 50 75 100 125 150

3

I

D

, DRAIN CURRENT (A)

TA, AMBIENT TEMPERATURE (oC)

7

6

5

4

t, PULSE WIDTH (s)

200

10

1

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

VGS = 5V

100

I

DM

, PEAK CURRENT CAPABILITY (A)

I = I

25

150 - T

A

125

FOR TEMPERATURES ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

TA = 25oC

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

125

RF1K49156

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

1

0.01

, NORMALIZED

0.1

θJA

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

10

TJ = MAX RATED, TA = 25oC

MAX = 30V

V

DSS

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

0

10

1

10

2

x R

JA

θ

2

+ T

JA

A

3

10

1

, DRAIN CURRENT (A)

D

0.1

I

OPERATION IN THIS AREA MAY BE LIMITED BY r

0.01

0.1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1 10 100

5ms 10ms

100ms

1s

DC