Fairchild Semiconductor RF1K49092 Datasheet

Data Sheet January 2002

RF1K49092

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is des ign ed for use in applications such as switching regu la tors, switching converters, motor driv ers, relay drive rs, and low voltage bus swit ch es. This product achieves full rated conduction at a gate bias in the 3V to 5V range, there by facilitating true on-off power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49092.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49092 MS-012AA RF1K49092

NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e., RF1K4909296.

Features

• 3.5A, 12V (N-Channel)

2.5A, 12V (P-Channel)

•r r

= 0.050Ω (N-Channel)

DS(ON)

= 0.130Ω (P-Channel)

DS(ON)

• Temperature Compensating PSPICE® Model

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines f or Solde ring Surface Mount

Components to PC Boards”

Symbol

D1 (8) D1 (7)

S1 (1)

G1 (2)

D2 (6) D2 (5)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

S2 (3)

G2 (4)

5

3

4

RF1K49092

Absolute Maximum Ratings

TA = 25oC Unless Otherwise Specified

N-CHANNEL P-CHANNEL UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ, Note 1). . . . . . . . .V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

12 -12 V 12 -12 V

±10 ±10 V

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . I

Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . E

DM

AS

D

Refer to Peak Current Curve

Refer to UIS Curve Refer to UIS Curve

3.5 Refer to Peak Current Curve

2.5

A

Power Dissipation

T

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

A

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . T

D

, T

J

STG

2

0.016

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . .T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300 260

2

0.016

300 260

W

W/oC

o

C

o

C

o

C

NOTE:

= 25oC to 125oC.

1. T

J

N-Channel Electrical Specifications

TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t Turn-On Delay Time t

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Turn-Off Time t Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q Threshold Gate Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS OSS RSS

JA

θ

= 250µA, VGS = 0V, (Figure 13) 12 - - V

= VDS, ID = 250µA, (Figure 12) 1 - 2 V

VDS = 12V,

= 0V

V

GS

T

= 25oC--1µA

A

T

= 150oC--50µA

A

VGS = ±10V - - ±100 nA

= 3.5A, VGS = 5V, (Figures 9, 11) - - 0.050 Ω

VDD = 6V, ID ≈ 3.5A, R

= 1.71Ω, VGS = 5V,

L

= 25Ω

R

GS

(Figure 10)

- - 100 ns

-18-ns

-60-ns

-50-ns

-60-ns

- - 140 ns

= 0V to 10V VDD = 9.6V,

I

= 3.5A,

VGS = 0V to 5V - 12 15 nC VGS = 0V to 1V - 0.9 1.2 nC

D

= 2.74Ω

R

L

(Figure 15)

VDS = 10V, VGS = 0V, f = 1MHz (Figure 14)

-2025nC

- 750 - pF

- 700 - pF

- 275 - pF

Pulse width = 1s

- - 62.5

o

C/W

Device mounted on FR-4 material

N-Channel Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage V

SD

Reverse Recovery Time t

ISD = 3.5A - - 1.25 V ISD = 3.5A, dISD/dt = 100A/µs--70ns

rr

POWER DISSIPATION MULTIPLIER

0

I

, DRAIN CURRENT (A)

RF1K49092

P-Channel Electric al Speci fic atio ns

TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate Threshold Voltage V Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I Drain to Source On Resistance r Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t Total Gate Charge Q Gate Charge at -5V Q Threshold Gate Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction-to-Ambient R

DSSID

GS(TH)VGS

DSS

VDS = -12V, V

GSS

DS(ON)ID

ON

VGS = ±10V - - ±100 nA

VDD = -6V, ID ≈ 2.5A, R

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(-5)

g(TH)

ISS

R (Figure 31)

r

f

VGS = 0V to -5V - 10 14 nC VGS = 0V to -1V - 0.8 1.1 nC VDS = -10V, VGS = 0V,

f = 1MHz (Figure 35)

OSS RSS

θJA

Pulse width = 1s Device mounted on FR-4 material

= 250µA, VGS = 0V, (Figure 34) -12 - - V

= VDS, ID = 250µA, (Figure 33) -1 - -2 V

= 25oC---1µA

T

GS

= 0V

A

= 150oC---50µA

T

A

= 2.5A, VGS = -5V - - 0.130 Ω

- - 115 ns

= 2.40Ω, VGS = -5V,

L GS

= 25Ω

-25-ns

-65-ns

-40-ns

-45-ns

- - 110 ns

= 0V to -10V VDD = -9.6V,

= 2.5A,

I

D

= 3.84Ω

R

L

-1924nC

(Figure 36)

- 775 - pF

- 550 - pF

- 150 - pF

- - 62.5

o

C/W

P-Channel Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage V Reverse Recovery Time t

SD

ISD = -2.5A - - -1.25 V ISD = -2.5A, dISD/dt = -100A/µs--55ns

rr

Typical Performance Curves (N-Channel)

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0 25 50 75 100 15

TA, AMBIENT TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED PO WER DISSIPATIO N vs AMBIENT

TEMPERATURE

4.0

3.5

3.0

2.5

2.0

1.5

1.0

D

0.5

0.0 25 50 75 100 125 15

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

0

I

, DRAIN CURRENT (A)

1

I

, PEAK CURRENT CAPABILITY (A)

0

I

, AVALANCHE CURRENT (A)

I

, DRAIN CURRENT (A)

RF1K49092

Typical Performance Curves (N-Channel)

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

1

0.01

, NORMALIZED

JA

0.1

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

100

-3

10

-2

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

10

1

-1

10

t, RECTANGULAR PULSE DURATION (s)

TJ = MAX RATED T

= 25oC

A

MAX = 12V

V

DSS

5ms 10ms

100ms

(Continued)

10

P

DM

t

1

t

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

200

100

1

10

TA = 25oC

2

10

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I

=

VGS = 5V

1/t2

x R

JA

θ

o

C DERATE PEAK

150 - T

I

25

2

JA

125

+ T

A

3

10

0.1

D

OPERATION IN THIS AREA MAY BE LIMITED BY r

0.01

0.1

DS(ON)

11010

VDS, DRAIN TO SOURCE VOLTAGE (V)

1s

DC

DM

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

1

-5

10

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

0

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

20

10

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

AS

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.1

STARTING TJ = 25oC

STARTING TJ = 150oC

- VDD)

DSS

- VDD) +1]

DSS

11010

tAV, TIME IN AVALANCHE (ms)

25

20

= 4V

V

GS

= 10V

V

GS

VGS = 5V V

= 4.5V

GS

15

10

D

5

PULSE DURATION = 80µs

= 3V

V

GS

DUTY CYCLE = 0.5% MAX

= 25oC

T

0

1

2345

A

VDS, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer t o Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS

.5

I

, ON-STATE DRAIN CURRENT (A)

.0

r

, ON-STATE RESISTANCE (m

)

0

SWITCHING TIME (ns)

0

NORMALIZED ON RESISTANCE

0

NORMALIZED GATE

0

NORMALIZED DRAIN TO SOURCE

RF1K49092

Typical Performance Curves (N-Channel)

25

20

15

10

5

D(ON)

0

0.0 3.0 4.5 6.0 7

25oC

-55oC

1.5 VGS, GATE TO SOURCE VOLTAGE (V)

150oC

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN T O SOURCE ON RESIST ANCE vs GATE

140

VDD = 6V, ID = 3.5A, RL = 1.71Ω

120

100

80

60

V

DD

t

= 6V

t

r

D(OFF)

t

f

(Continued)

250

Ω

200

150

100

50

DS(ON)

0

2.5 3.5 4.0 4.5 5

ID = 7.0A

ID = 3.5A ID = 1.75A

ID = 0.5A

3.0 VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 10V

DD

VOLTAGE AND DRAIN CURRENT

2.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

= 5V, ID = 3.5A

V

GS

1.5

1.0

40

20

t

0

10

RGS, GATE TO SOURCE RESISTANCE (Ω)

20 30 40 5

D(ON)

0.5

0.0

-80 -40 0 40 80 120 16 TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. SWITCHING TIME vs GATE RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2.0 VGS = VDS, ID = 250µA

1.5

1.0

0.5

THRESHOLD VOLTAGE

0.0

-80 -40 0 40 80 120 16 TJ, JUNCTION TEMPERATURE (oC)

2.0 ID = 250µA

1.5

1.0

0.5

BREAKDOWN VOLTAGE

0.0

-80 -40 0 40 80 120 16 TJ, JUNCTION TEMPERATURE (oC)

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTA GE vs

JUNCTION TEMPERATURE

FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDO WN

VOLTAGE vs JUNCTION TEMPERATURE

Fairchild Semiconductor RF1K49092 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual