Fairchild Semiconductor RF1K49088 Datasheet

SEMICONDUCTOR

3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel

RF1K49088

January 1997

LittleFET™ Enhancement Mode Power MOSFET

Features

• 3.5A, 30V

DS(ON)

= 0.060Ω

PSPICE Model

•r

Temperature Compensating

•

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49088 MS-012AA RF1K49088

NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4908896.

Description

The RF1K49088 Dual N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic lev el (5V) integr ated circuits.

Formerly developmental type TA49088.

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

D2(6)
D2(5)

S2(3)

G2(4)

5

3

4

LittleFET™ is a trademerk of Harris Corporation

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-58

File Number 3952.4

RF1K49088

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

A

RF1K49088 UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±10 V

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

D

Refer to Peak Current Curve

DM

AS

3.5

Refer to UIS Curve

A

Power Dissipation

TA = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

STG

, T

J
L

2

0.016

-55 to 150
260

W

W/oC

o

C

o

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 30 - - V

= VDS, ID = 250µA1-2V

VDS = 30V,

TA = 25oC--1µA

VGS = 0V

= 150oC--50µA

T

A

Gate to Source Leakage Current I
On Resistance r
Turn-On Time t

GSS

DS(ON)ID

ON

VGS = ±10V - - 100 nA

= 3.5A, VGS = 5V - - 0.060 Ω

VDD = 15V, ID = 3.5A,

- - 100 ns

RL = 4.29Ω, VGS = 5V,

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

RGS = 25Ω

r

f

OFF

= 0V to 10V VDD = 24V,

-18-ns

-60-ns

-53-ns

-47-ns

- - 125 ns

-2430nC

ID = 3.5A,

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C

g(5)

g(TH)

ISS

VGS = 0V to 5V - 13 17 nC

RL = 6.86Ω

VGS = 0V to 1V - 0.8 1.0 nC
VDS = 25V, VGS = 0V,

- 750 - pF

f = 1MHz

Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Ambient R

OSS

RSS

JA

θ

Pulse width = 1s
Device mounted on FR-4 material

- 275 - pF

- 100 - pF

- - 62.5

o

C/W

Source to Drain Diode Ratings and Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

ISD = 3.5A - - 1.25 V
ISD = 3.5A, dISD/dt = 100A/µs--50ns

rr

5-59

Typical Performance Curves

RF1K49088

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING CURVE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

1

0.01
P

DM

, NORMALIZED

JA

0.1

θ

Z

THERMAL IMPEDANCE

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1/t2

x R

JA

θ

1

10

0.01

-3

10

SINGLE PULSE

-2

10

t, RECTANGULAR PULSE DURATION (s)

125

t

1

10

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

D

I

0.5

0.0
25

50

75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERA TURE

100

10

1

, DRAIN CURRENT (A)

D

t

2

+ T

JA

A

θ

2

3

10

0.1

OPERATION IN THIS

I

AREA MAY BE
LIMITED BY r

0.01

0.1

DS(ON)

V

DSS

MAX = 30V

1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED

= 25oC

T

A

5ms

10ms

100ms

1s

DC

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

200

100

10

, PEAK CURRENT CAPABILITY (A)

DM

I

1

-5

10

VGS = 10V

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

-2

10

150 - T

25

125

-1

10

A

TA = 25oC

0

10

FIGURE 5. PEAK CURRENT CAPABILITY NOTE: Refer to Harris Application Notes AN9321 and AN9322.

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

20

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

10

DSS

- VDD)

DSS

- VDD) +1]

STARTING TJ = 25oC

, AVALANCHE CURRENT (A)

AS

I

1

10

1

0.1

STARTING TJ = 150oC

1 10 100

tAV, TIME IN AVALANCHE (ms)

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

5-60