Fairchild Semiconductor RF1K49086 Datasheet

Power MOSFET Data Sheets
SEMICONDUCTOR
January 1997
LittleFET™ Enhancement Mode Power MOSFET
Features
DS(ON)
= 0.060
PSPICE Model
•r
Temperature Compensating
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49086 MS-012AA RF1K49086
NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e. RF1K4908696.
RF1K49086
3.5A, 30V, Avalanche Rated, Dual N-Channel
Description
The RF1K49086 Dual N-Channel power MOSFET is manu­factured using an advanced MegaFET process. This pro­cess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, result­ing in outstanding performance. It is designed for use in applications such as switching regulators, switching convert­ers, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from inte­grated circuits.
Formerly developmental type TA49086.
Symbol
D1(8) D1(7)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
S1(1)
G1(2)
D2(6) D2(5)
S2(3)
G2(4)
5
3
4
LittleFET™ is a trademark of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1997
5-57
File Number 3986.4
RF1K49086
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
A
RF1K49086 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
30 V 30 V
±20 V
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
D
Refer to Peak Current Curve
DM
AS
3.5
Refer to UIS Curve
A
Power Dissipation
TA = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
STG
, T
J L
2
0.016
-55 to 150 260
W
W/oC
o
C
o
C
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV Gate Threshold Voltage V Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V 30 - - V
= VDS, ID = 250µA1-3V
VDS = 30V,
TA = 25oC--1µA
VGS = 0V
T
= 150oC--50µA
A
Gate to Source Leakage Current I On Resistance r
Turn-On Time t
GSS
DS(ON)ID
ON
VGS = ±20V - - 100 nA
= 3.5A VGS = 10V - - 0.060
V
= 4.5V - - 0.132
GS
VDD = 15V, ID = 3.5A,
- - 50 ns
RL = 4.29, VGS = 10V,
Turn-On Delay Time t
d(ON)
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Turn-Off Time t Total Gate Charge Q
g(TOT)VGS
RGS = 25
r
f
OFF
= 0V to 20V VDD = 24V,
-10-ns
-30-ns
-60-ns
-45-ns
- - 130 ns
-3545nC
ID = 3.5A,
Gate Charge at 10V Q Threshold Gate Charge Q Input Capacitance C
g(10)
g(TH)
ISS
VGS = 0V to 10V - 13 17 nC
RL = 6.86
VGS = 0V to 2V - 2.3 2.9 nC VDS = 25V, VGS = 0V,
- 575 - pF
f = 1MHz
Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction-to-Ambient R
OSS
RSS
θJA
Pulse Width = 1s
- 275 - pF
- 100 - pF
- - 62.5
o
C/W
Device mounted on FR-4 material
Source to Drain Diode Ratings and Specifications
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V Reverse Recovery Time t
SD
ISD = 3.5A - - 1.25 V ISD = 3.5A, dISD/dt = 100A/µs--45ns
rr
5-58
Typical Performance Curves
RF1K49086
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0.0 0 25 50 75 100 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
1
0.01 P
DM
, NORMALIZED
JA
0.1
θ
Z
THERMAL IMPEDANCE
NOTES: DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1/t2
x R
JA
θ
1
10
0.01
SINGLE PULSE
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
125
t
1
10
4.0
3.5
3.0
2.5
2.0
1.5
, DRAIN CURRENT (A)
1.0
D
I
0.5
0.0 25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERA TURE
100
10
1
, DRAIN CURRENT (A)
D
t
2
+ T
JA
A
θ
2
3
10
0.1
OPERATION IN THIS
I
AREA MAY BE LIMITED BY r
0.01
0.1
DS(ON)
V
DSS
MAX = 30V
1 10 100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TJ = MAX RATED
= 25oC
T
A
5ms
10ms
100ms
1s
DC
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
200
100
VGS = 10V
10
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
, PEAK CURRENT CAPABILITY (A)
DM
I
1
-5
10
TA = 25oC
-4
10
-3
10
t, PULSE WIDTH (s)
FOR TEMPERATURES ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 - T
I = I
25
-2
10
10
A
125
-1
10
0
FIGURE 5. PEAK CURRENT CAPABILITY NOTE: Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
20
If R = 0 tAV = (L)(IAS)/(1.3*RATED BV
If R 0 t
= (L/R)ln[(IAS*R)/(1.3*RATED BV
AV
10
DSS
- VDD)
DSS
- VDD) +1]
STARTING TJ = 25oC
, AVALANCHE CURRENT (A)
AS
I
1
10
STARTING TJ = 150oC
1
0.1
1 10 100
tAV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
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