Fairchild Semiconductor QVE00832 Datasheet

NOTES

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as
cleaning agents.

4. Soldering iron tip

1/16” (1.6mm) from housing.

FEATURES

• No contact switching

• 5mm wide slot

• 0.5 mm aperture width

• Opaque black plastic housing

• Locating knobs on housing base

for accurate mounting

• Transistor Output

SCHEMATIC

NOTES:

1. Dimensions for all drawings are in inches (millimeters).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

PACKAGE DIMENSIONS

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

Parameter Symbol Rating Units

Operating Temperature TOPR -55 to +100 °C

Storage Temperature TSTG -55 to +100 °C

Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C

Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C

EMITTER

Continuous Forward Current IF 60 mA

Reverse Voltage VR 6 V

Power Dissipation(1) PD 150 mW

SENSOR

Collector-Emitter Voltage VCEO 30 V

Emitter-Collector Voltage VECO 4.5 V

Collector Current IC 20 mA

Power Dissipation(1) PD 150 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)



2001 Fairchild Semiconductor Corporation

DS300257 1/3/02 1 OF 4 www.fairchildsemi.com

QVE00832

0.551 (14.00)

0.236 (6.00)

0.020 (.50)

0.394 (10.00)

0.295 (7.50)

0.027 (.70)
(2X)

0.092 (2.35)

PINS

0.020 (.51) (4X)
SQ. (TYP)

0.100 (2.54) (2X)
(TYP)

+

E

(2X)

0.400

(10.16)

(2X) (NOM)

2

14

PIN 1 ANODE

PIN 2 CATHODE

D

+

0.197

C

L

(5.00)

C

L

3

PIN 3 COLLECTOR
PIN 4 EMITTER

C

L

C (OPTICAL)

L

0.197 (5.00)
MIN (4X)

0.260
(6.60)

KNOB
Ø0.026 (.66)

C

L

0.100 (2.50)

0.205 (5.20)

14

2 3

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA= 25°C )

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

EMITTER

Forward Voltage I

F

= 20 mA V

F

—1.21.5 V

Reverse Current VR= 4 V I

R

——10µA

Peak Emission Wavelength IF= 20 mA D

PE

— 940 — nm

SENSOR

Dark Current V

CE

= 10 V, IF= 0 mA I

D

— — 200 nA

COUPLED

Collector Current I

F

= 20 mA, V

CE

= 10 V I

C(ON)

0.5 — 14 mA

Collector Emitter IF= 20 mA, IC =0.1 mA V

CE (SAT)

——0.4 V

Saturation Voltage

Rise Time VCC= 5 V, RL = 100 1 t

r

—4—µs

Fall Time I

C

= 5 mA t

f

—4—µs

TYPICAL PERFORMANCE CURVES

www.fairchildsemi.com 2 OF 4 1/3/02 DS300257

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00832

110

100

90

80

70

60

50

Normalized(%)

40

CE

I

30

20

10

TA = 25˚C

= 20 mA

I

F

= 10 V

V

CE

0

0

0.1 0.2 0.3

0

Distance (mm) Distance (mm)

0.4 0.5 0.6

Fig. 1 Collector Current vs. Shield distance Fig. 2 Collector Current vs. Shield distance

110

100

90

0

80

70

60

50

Normalized(%)

40

CE

I

30

20

10

0

0

TA = 25˚C

= 20 mA

I

F

= 10 V

V

CE

0.25 0.5 0.75 1 1.25 1.5 1.75 2

4.5

3.5

2.5

(mA)

CE

I

1.5

0.5

5

TA = 25˚C

4

3

2

1

0

123456789101112

0

IF = 20 mA

IF = 10 mA

(V)

CE

IF = 40 mA

IF = 30 mA

1.9

1.4
IF = 10 mA, IC = 0.05 mA

1.2

1

Normalized

0.8

CE

V

0.6

Normalized to

= 20 mA, IC = 0.1 mA, TA = 25˚C

I

0.4

F

0.2

0

-50 -25 0

IF = 20 mA, IC = 0.1 mA

IF = 30 mA, IC = 0.15 mA

25 50 75 100

Temp(C)V

Fig. 3 Collector-Emitter Voltage vs. Collector Current Fig. 4 Collector-Emitter Voltage vs. Temperature