Fairchild Semiconductor QVE00039 Datasheet

Parameter Symbol Rating Units

Operating Temperature T

OPR

-40 to +85

°C

Storage Temperature T

STG

-40 to +85

°C

Lead Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec

°C

EMITTER

Continuous Forward Current I

F

50 mA

Reverse Voltage V

R

5V

Power Dissipation

(1)

P

D

100 mW

SENSOR

Collector-Emitter Voltage V

CEO

30 V

Emitter-Collector Voltage V

ECO

4.5 V

Power Dissipation

(1)

P

D

100 mW

PACKAGE DIMENSIONS

0.060
(1.52)

0.655

(16.64)

FULL RADIUS

(4X)

W

B
R

DG

0.060

(1.52)

(2X)

0.160

(4.06)

0.250

(6.35)

0.230

(5.84)

0.170

(4.32)

0.060

(1.52)

0.131

(3.32)

0.375

(9.52)

FULL RADIUS

(2X)

0.245

(6.22)

0.150

(3.81)

0.145

(3.68)

0.445

(11.30)

0.050

(1.27)

0.385

(9.78)

45°

(2X)

0.070

(1.78)

(2X)

DARK GREEN EMITTER

WHITE COLLECTOR

BLACK CATHODE

RED ANODE

0.095 (2.41)

0.010 (0.25)

10.00±0.50
(254±12.7)

NOTES

(Applies to Max Ratings and Characteristics Tables.)

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as
cleaning agents.

4. Soldering iron 1/16” (1.6mm) minimum from housing.

1 of 4 100016C

QVE00039

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

FEATURES

• No contact switching

• 2.41 mm wide slot

• Slot horizontal to mounting surface

• Mounting tabs

• Transistor Output

• Wire leads for remote connection 10” (254mm)

• Opaque black plastic housing

• 0.010 (0.25) aperture width

SCHEMATIC

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

NOTES:

1. Dimensions are in inches (mm)

2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.

3. Wire gauge: 28 AWG

WHITEBLACK

DARK GREENRED

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

EMITTER

Forward Voltage I

F

= 20 mA V

F

——1.7 V

Reverse Current VR= 5 V I

R

——100

µ

A

Peak Emission Wavelength IF= 20 mA !

PE

— 940 — nm

SENSOR

Collector-Emitter Breakdown I

C

= 1 mA BV

CEO

30 —— V

Emitter-Collector Breakdown IE= 0.1 mA BV

ECO

5 —— V

Dark Current VCE= 10 V, IF= 0 mA I

D

——100 nA

COUPLED

Collector Current I

F

= 20 mA, VCE= 10 V I

C(ON)

0.5 —— mA

Collector Emitter IF= 20 mA, IC= 0.4 mA V

CE (SAT)

——0.4 V
Saturation Voltage
Rise Time VCE= 5 V, RL= 100 " t

r

— 8 —

µ

s

Fall Time I

C(ON)

= 5 mA t

f

— 50 —

µ

s

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA= 25°C)

2 of 4 100016C

QVE00039

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

TYPICAL PERFORMANCE CURVES

Fig. 1 Forward Voltage vs. Ambient Temperature

3

Pulsed

I

F

Pulse Width = 100 µs
Duty Cycle = 0.1%

= 100 mA

I

2

F

IF = 50 mA

Fig. 2 Forward Current Vs. Forward Voltage

100

TA = 25˚C

80

60

1

- FORWARD VOLTAGE (V)

F

V

= 10 mA

I

F

0

-40 -20 0 20 40 60 80 100

IF = 20 mA

- AMBIENT TEMPERATURE (˚C)

T

A

Fig. 3 Collector Emitter Dark Current (Normalized)

4

10

Normalized to:
V

CE

TA = 25˚C

3

10

2

10

1

10

0

10

- NORMALIZED DARK CURRENT

O
E
C

I

-1

10

vs. Ambient Temperature

= 25 V

40 60 80 100

- AMBIENT TEMPERATURE (˚C)

T

A

V

CE

= 25 V

V

= 10 V

CE

40

- FORWARD CURRENT (mA)

20

F

I

0

1.0 1.1 1.2 1.3 1.4 1.5 1.6

- FORWARD VOLTAGE (V)

V

F

Fig. 4 Rise and Fall Time vs. Load Resistance

100

VCC = 5 V
I

= 0.5 mA

C

t

= 100 us

pw

T = 10 ms
T

10

1

RISE AND FALL TIME (µs)

0.1
10 100 1000

= 25˚C

A

t

f

t

r

- LOAD RESISTANCE (

R

L

")

t

f

t

r