Fairchild Semiconductor QSE213 Datasheet
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213 QSE214
PACKAGE DIMENSIONS
0.060 (1.50)
0.174 (4.44)
0.224 (5.71)
0.5 (12.7)
MIN
EMITTER
0.060 (1.52)
0.100 (2.54)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
R 0.030 (0.76)
0.047 (1.20)
0.177 (4.51)
0.030 (0.76)
0.020 (0.51)
SQ. (2X)
SCHEMATIC
Collector
Emitter
DESCRIPTION
The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package.
FEATURES
• NPN Silicon Phototransistor
• Package Type: Sidelooker
• Medium Reception Angle, 50°
• Daylight Filter
• Black Epoxy Package
• Matching Emitter: QEE213
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
7/23/02
Θ
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213 QSE214
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Unit
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
=25°C unless otherwise specified)
A
T
T
T
SOL-I
T
SOL-F
V
V
OPR
STG
CE
EC
P
D
-40 to +100 °C
-40 to +100 °C
240 for 5 sec °C
260 for 10 sec °C
30 V
5V
100 mW
Parameter Test Conditions Symbol Min Typ Max Units
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
V
= 10 V, E
CE
I
= 1 mA BV
C
I
= 100 µA BV
E
E
= 0.5 mW/cm
e
V
= 5 V
CE
E
= 0.5 mW/cm
e
I
= 0.1 mA
C
V
= 5V, R
CC
= 0 I
e
(QSE213)
(QSE214) 1.00 ——
(5)
(5)
= 100 Ω , I
L
2
, V
= 5 V
CE
2
,
= 1mA
C
λ
I
C(ON)
V
CE(SAT)
PS
D
CEO
ECO
t
r
t
f
— 880 — nM
— ±25 — Deg.
——100 nA
30 —— V
5 —— V
0.2 — 1.50
mA
——0.4 V
— 8 —
µs
— 8 —
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 950 nm GaAs.
© 2002 Fairchild Semiconductor Corporation
Page 2 of 4
7/23/02
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