Fairchild Semiconductor QSD723, QSD724, QSD722 Datasheet
0.190 (4.83)
0.178 (4.52)
0.235 (5.97)
0.218 (5.54)
0.030 (0.76)
COLLECTOR
45°
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.050 (1.27)
0.215 (5.46) NOM
0.020 (0.51)
SQ 2PLCS
45°
0.020 (0.51) RADIUS
EMITTER
0.100 (2.54) NOM
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
FEATURES
• NPN Silicon Phototransistor
• Package Type: Plastic TO-18
• Matched Emitter: QED523
• Narrow Reception Angle, 40°
• Daylight Filter
• Package material and color: black epoxy
• High Sensitivity
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
QSD722 QSD723 QSD724
DESCRIPTION
The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300363 7/18/01 1 OF 4 www.fairchildsemi.com
COLLECTOR
EMITTER
www.fairchildsemi.com 2 OF 4 7/18/01 DS300363
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector-Emitter Voltage V
CE
30 V
Emitter-Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength !
PS
— 880 — nm
Reception Angle " — ±20 — Deg.
Collector-Emitter Dark Current VCE= 10 V, Ee = 0 I
CEO
— — 100 nA
Collector-Emitter Breakdown IC= 1 mA BV
CEO
30 — — V
Emitter-Collector Breakdown IE= 100 µA BV
ECO
5——V
On-State Collector Current
(5)
QSD722 0.6 — 3.8
QSD723
Ee = 0.5 mW/cm
2
, VCE= 5 V
I
C(ON) 2.5 — 10.0 mA
QSD724 3.5 — —
Saturation Voltage
(5)
Ee = 0.5 mW/cm2, IC= 0.6 mA
V
CE(sat)
— 0.4 — V
Rise Time
V
CC
= 5 V, RL= 100 Ω, IC= 0.2 mA
t
r
—8—
µs
Fall Time t
f
—8—
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722 QSD723 QSD724
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