Fairchild Semiconductor QSD124, QSD122, QSD123 Datasheet
0.195 (4.95)
0.040 (1.02)
NOM
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
COLLECTOR
0.800 (20.3)
MIN
0.100 (2.54) NOM
0.500 (1.25)
EMITTER
PACKAGE DIMENSIONS
FEATURES
• NPN Silicon Phototransistor
• Package Type: T-1 3/4
• Notched Emitter: QED12X/QED22X/QED23X
• Narrow Reception Angle: 24°C
• Daylight Filter
• Package Material and Color: Black Epoxy
• High Sensitivity
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
SCHEMATIC
DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
QSD122 QSD123 QSD124
2001 Fairchild Semiconductor Corporation
DS300361 7/20/01 1 OF 4 www.fairchildsemi.com
COLLECTOR
EMITTER
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector-Emitter Voltage V
CE
30 V
Emitter-Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength !
PS
— 880 — nm
Reception Angle " — ±12 — Deg.
Collector Emitter Dark Current VCE= 10 V, Ee = 0 I
CEO
— — 100 nA
Collector Emitter Breakdown IC= 1 mA BV
CEO
30 — — V
Emitter Collector Breakdown IE= 100 µA BV
ECO
5——V
On-State Collector Current
(5)
QSD122 1.00 — 6.00
QSD123 E
e
= 0.5 mW/cm2, VCE= 5 V I
C (ON)
4.00 — 16.00 mA
QSD124 6.00 — —
Saturation Voltage
(5)
Ee= 0.5 mW/cm2, IC= 0.5 mA V
CE (SAT)
— — 0.4 V
Rise Time
V
CC = 5 V , R
L
= 100 V IC = 0.2 mA
t
r
—7—
µs
Fall Time t
f
—7—
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.
www.fairchildsemi.com 2 OF 4 7/20/01 DS300361
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122 QSD123 QSD124
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