Fairchild Semiconductor QSC112 Datasheet

0.030 (0.76)
NOM

0.116 (2.95)

0.193 (4.90)

0.800 (20.3)
MIN

0.050 (1.27)

0.100 (2.54)
NOM

0.018 (0.46)
SQ. (2X)

0.155 (3.94)

EMITTER

0.052 (1.32)

0.032 (0.082)

REFERENCE

SURFACE

PACKAGE DIMENSIONS

FEATURES

• Tight production distribution.

• Steel lead frames for improved reliability in solder mounting.

• Good optical-to-mechanical alignment.

• Plastic package is infrared transparent black to attenuate visible light.

• Mechanically and spectrally matched to the QECXXX LED.

• Black plastic body allows easy recognition from LED.

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114



2001 Fairchild Semiconductor Corporation

DS300358 7/09/01 1 OF 4 www.fairchildsemi.com

DESCRIPTION

The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.

COLLECTOR

EMITTER

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-40 to +100 °C

Storage Temperature T

STG

-40 to +100 °C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec °C

Collector-Emitter Voltage V

CE

30 V

Emitter-Collector Voltage V

EC

5V

Power Dissipation

(1)

P

D

100 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114

www.fairchildsemi.com 2 OF 4 7/09/01 DS300358

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA= 25°C)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Sensitivity Wavelength !

PS

—

880 — nm
Reception Angle " — ±8 — Deg.
Collector-Emitter Dark Current VCE= 10 V, Ee = 0 I

CEO

— — 100 nA

Collector-Emitter Breakdown IC= 1 mA BV

CEO

30 — — V

Emitter-Collector Breakdown IE= 100 µA BV

ECO

5——V

On-State On-State Collector QSC112

Ee = 0.5 mW/cm

2

,

1—4

On-State On-State Collector QSC113

V

CE

= 5 V

(5)

I

C(ON)

2.40 — 9.60 mA

On-State On-State Collector QSC114 4.00 — —
Saturation Voltage

Ee = 0.5 mW/cm

2

,

V

CE(sat) — — 0.4 V

IC= 0.5 mA

(5)

Rise Time

V

CC

= 5 V, RL= 100 #

t

r

— 5.0 —

µs

Fall Time I

C

= 2 mA t

f

— 5.0 —

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron

1/16” (1.6mm) minimum from housing.

5. ! = 880 nm, AlGaAs.