Fairchild Semiconductor QSB363 Datasheet
PACKAGE DIMENSIONS
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
SCHEMATIC
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3).118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
QSB363
2001 Fairchild Semiconductor Corporation
DS300357 8/2/01 1 OF 5 www.fairchildsemi.com
DESCRIPTION
The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.
FEATURES
• NPN Silicon Phototransistor
• T-3/4 (2mm) Surface Mount Package
• Medium Wide Beam Angle, 24°
• Black Plastic Package
• Matched Emitters: QEB363 or QEB373
• Daylight Filter
• Tape & Reel Option (See Tape & Reel Specifications)
• Lead Form Options: Gullwing, Yoke, Z-Bend
COLLECTOR
EMITTER
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS
Peak Sensitivity Wavelength D
PS
— 880 — nm
Reception Angle 0 — ±12 — Deg.
Dark Current VCE = 10 V, Ee = 0 ID — — 100 nA
Collector-Emitter Breakdown IC = 1 mA BVCEO 30 — — V
Emitter-Collector Breakdown IE = 100 µA BVECO 4—— V
On-State Collector Current Ee = 0.5 mW/cm2 IC(on) 0.7 — — mA
V
CE = 5 V
(5)
Saturation Voltage Ee = 0.5 mW/cm2 VCE (SAT) — — 0.4 V
I
C = 0.1 mA
(5)
Rise Time VCC= 5 V, RL= 100 1 t
r
—5—µs
Fall Time I
C
= 0.2 mA t
f
—5—µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
NOTES
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100
µ
s, T= 10 ms.
5. D = 940 nm, GaAs.
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +85 °C
Storage Temperature T
STG
-40 to +85 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector Emitter Voltage V
CE
30 V
Emitter Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
www.fairchildsemi.com 2 OF 5 8/2/01 DS300357
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