Fairchild Semiconductor QSB320F Datasheet

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Sensitivity Wavelength D

PS

— 880 — nm

Wavelength Sensitivity Range D

SR

700 — 1000 nm

Reception Angle 0 — 120 — Deg.

Collector Emitter Dark Current VCE= 25 V, Ee = 0 I

D

— — 200 nA

Collector Emitter Breakdown IC= 1 mA BV

CEO

30 — — V

Emitter Collector Breakdown IE= 100 µA BV

ECO

5——V

On-State Collector Current Ee= 0.1 mW/cm

2(4)

, VCE= 5 V I

C (ON)

16 — — µA

Saturation Voltage Ee= 0.5 mW/cm

2(4)

, IC= 0.05 mA V

CE (SAT)

— — 0.3 V

Rise Time VCC= 5 V, RL= 100 1 t

r

—8—µs

Fall Time I

C

= 1 mA t

f

—8—µs

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C)

NOTES

1. Derate power dissipation linearly

2.2 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.

4. D

=

940 nm.

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-55 to +100 °C

Storage Temperature T

STG

-55 to +100 °C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec °C

Collector Emitter Voltage V

CE

35 V

Emitter Collector Voltage V

EC

5V

Collector Current I

C

15 mA

Power Dissipation

(1)

P

D

165 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

PACKAGE DIMENSIONS

0.134 (3.4)

NOTES:

1. Dimensions for all drawings are in inches (millimeters).

2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.

FEATURES

• Surface Mount PLCC-2 Package

• Wide Reception Angle, 120°

• High Sensitivity

• Phototransistor Output

• Matched Emitter: QEB421

• Daylight Filter

SCHEMATIC

QSB320F

SURFACE MOUNT SILICON

INFRARED PHOTOTRANSISTOR



2001 Fairchild Semiconductor Corporation

DS300387 2/26/01 1 OF 3 www.fairchildsemi.com

0.118 (3.0)

0.118 (3.0)

0.102 (2.6)

0.091 (2.3)

0.083 (2.1)

0.035 (0.9)

0.028 (0.7)

0.094 (2.4)

0.083 (2.1)

0.067 (1.7)

0.041 (0.1)

0.043 (1.1)

0.020 (0.5)

COLLECTOR

0.024 (0.6)

0.016 (0.4)

0.007 (.18)

0.005 (.12)

COLLECTOR

EMITTER

QSB320F

SURFACE MOUNT SILICON

INFRARED PHOTOTRANSISTOR

www.fairchildsemi.com 2 OF 3 2/26/01 DS300387

3

10

2

10

1

10

-Normalized Dark Current

0

10

D

I

-1

10

10

1

0.1

Fig.1 Dark Current Vs. Ambient Temperature

Normalized to:
VCE=25V

TA=25oC

VCE=25V

VCE=10V

40 60 80 100

o

C

TA-Ambient Temperature (

)

Fig.3 Light Current Vs. Collector to Emitter Voltage

Ie=1mW/cm

Ie=0.5mW/cm

Ie=0.2mW/cm

Ie=0.1mW/cm

2

2

2

2

Fig.2 Dark Current Vs. Collector Emitter Voltage

10

1

-Dark Current (nA)

D

I

0.1
0 102030405060

VCE-Collector Emitter Voltage (V)

Fig4. Light Current Vs. Ambient Temperature

10

1

-Normalized Light Current
L

I

Normalized to:

0.01

VCE=5V

Ie=0.5mW/cm

TA=25oC

0.001

0.1 1 10

2

VCE-Collector-emitter Voltage (V)

-Normalized Light Current

L

I

Normalized to:

=5V

V

CE

Ie=0.5mW/cm

=25oC

T

A

0.1

-40 -20 0 20 40 60 80 100

2

TA-Ambient Temperature (oC)