REFLECTIVE OBJECT SENSOR
QRE1113.GR
PACKAGE DIMENSIONS
0.114 (2.90)
0.099 (2.50)
0.079 (2.0)
0.063 (1.60)
0.063 (1.60)
0.055 (1.40)
0.024 (0.61)
NOM (4X)
0.024 (0.60)
0.016 (0.40)
4
1 2
0.193 (4.90)
0.177 (4.50)
PIN 1 ANODE PIN 3 COLLECTOR
PIN 2 CATHODE
PIN 4 EMITTER
3
30°
0.043 (1.10)
0.035 (0.90)
0.130 (3.30)
0.122 (3.10)
SCHEMATIC
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
FEATURES
• Phototransistor output
• Tape and reel packaging
• No contact surface sensing
• Miniature package
• Lead form style: Gull Wing
© 2002 Fairchild Semiconductor Corporation
Page 1 of 5
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12/9/02
REFLECTIVE OBJECT SENSOR
QRE1113.GR
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Units
Operating Temperature T
Storage Temperature T
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
T
OPR
STG
T
SOL-I
SOL-F
-25 to +85 °C
-30 to +100 °C
240 for 5 sec °C
260 for 10 sec °C
EMITTER
Continuous Forward Current I
Reverse Voltage V
Peak Forward Current
Power Dissipation
(5)
(1)
F
R
I
FP
P
D
50 mA
5V
1mA
75 mW
SENSOR
Collector-Emitter Voltage V
Emitter-Collector Voltage V
Collector Current I
Power Dissipation
ELECTRICAL / OPTICAL CHARACTERISTICS
(1)
(T
= 25°C unless otherwise specified)
A
CEO
ECO
C
P
D
30 V
5V
20 mA
50 mW
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS
INPUT DIODE
Forward Voltage I
Reverse Leakage Current V
Peak Emission Wavelength I
= 20 mA V
F
= 5 V I
R
= 20 mA
F
F
R
λ
PE
— 1.2 1.6 V
——10 µA
— 940 — nm
OUTPUT TRANSISTOR
Collector-Emitter Dark Current V
= 20 V, I
CE
= 0 mA I
F
D
——100 nA
COUPLED
On-State Collector Current I
Saturation Voltage V
Rise Time
Fall Time t
= 20 mA, V
F
V
= 5 V, I
CC
R
= 1K Ω
L
= 5 V I
CE
= 100 µA,
C(ON)
C(ON)
CE (SAT)
t
r
f
0.15 0.40 — mA
——0.3 V
— 20 —
— 20 —
µs
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) from housing.
5. Pulse conditions: tp = 100 µs; T = 10 ms.
© 2002 Fairchild Semiconductor Corporation
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12/9/02