Fairchild Semiconductor QRE00034 Datasheet
FEATURES
• Phototransistor output
• No contact surface sensing
• Daylight filter on the sensor
• Emitter = 940 nm
2001 Fairchild Semiconductor Corporation
DS300254 9/21/01 1 OF 6 www.fairchildsemi.com
SCHEMATIC
0.362 (9.20)
0.100 (2.54)
0.331 (8.40)
0.314 (8.00)
0.197 (5.00)
0.118 (3.00)
0.236 (6.00)
0.492 (12.50)
ED
++
0.018 (0.46)
SQ. (4X)
NOTES:
1. Dimensions for all drawings are in inches.
2. Tolerance of ± .010 on all non-nominal dimensions
unless otherwise specified.
PACKAGE DIMENSIONS
REFLECTIVE OBJECT SENSOR
QRE00034
DESCRIPTION
The QRE00034 reflective object sensor consists of an infrared emitting diode and an NPN phototransistor mounted side by
side on a converging optical axis in a black housing. The phototransistor responds to radiation from the emitting diode only
when a reflective object passes in its field of view.
E
+
D
+
2
1
3
4
12 43
NOTES
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip at 1/16” (1.6mm) from housing.
5. Pulse conditions: tp = 10 µs; T = 1 ms.
6. Measured as an Eastman Kodak neutral white test card with 90% diffused reflectance as a reflecting surface.
7. 0.160” (4 mm) distance from sensor face to reflector surface.
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER
IF= 20 mA V
F
——1.7 V
Forward Voltage
Reverse Current VR= 5 V I
R
——100 µA
Peak Emission Wavelength IF= 20 mA
PE
— 940 — nm
SENSOR
VCE= 10 V, IF= 0 mA I
D
——100 nA
Dark Current
Peak Sensitivity Wavelength VCE= 5 V
PS
— 880 — nm
COUPLED
IF= 20 mA, VCE= 10 V
(6,7)
I
C(ON)
0.16 — 2.00 mA
Collector Current
Collector Emitter IF= 20 mA, IC = 0.5 mA V
CE (SAT)
——0.4 V
Saturation Voltage
Rise Time VCE= 5 V, RL = 100 t
r
— 10 — µs
Fall Time I
C(ON)
= 5 mA t
f
— 50 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS (T
A
= 25°C)
Parameter Symbol Rating Units
Operating Temperature T
OPR
-40 to +85
°C
Storage Temperature T
STG
-40 to +85
°C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
EMITTER
I
F
50 mA
Continuous Forward Current
Reverse Voltage V
R
5V
Peak Forward Current I
FP
1A
Power Dissipation
(1)
P
D
100 mW
SENSOR
V
CEO
30 V
Collector-Emitter Voltage
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
www.fairchildsemi.com 2 OF 6 9/21/01 DS300254
REFLECTIVE OBJECT SENSOR
QRE00034
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