Fairchild Semiconductor QRB1133, QRB1134 Datasheet
PACKAGE DIMENSIONS
FEATURES
• Phototransistor output
• High Sensitivity
• Low cost plastic housing
• #26 AWG, 24 inch PVC wire termination
• Infrared transparent plastic covers for dust protection
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300351 7/02/01 1 OF 4 www.fairchildsemi.com
DESCRIPTION
The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
0.420 (10.67)
24.0 (609.60)
MIN #26 AWG
0.226 (5.74)
0.020 (0.51)
4X
0.300 (7.62)
(A)
(K)
(E)
(C)
FUNCTION
(C) COLLECTOR
(E) EMITTER
(K) CATHODE
(A) ANODE
ES
0.150 (3.81)
MIN
0.603 (15.32)
0.328 (8.33)
WIRE COLOR
WHITE
BLUE
GREEN
ORANGE
0.150 (3.81)
NOM
0.373 (9.47)
REFLECTIVE
SURFACE
0.703 (17.86)
0.210 (5.33)
AK CE
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA= 25°C)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER
IF= 40 mA V
F
— — 1.7 V
Forward Voltage
Reverse Current VR= 2.0 V I
R
— — 100 µA
Peak Emission Wavelength IF= 20 mA
!
PE
— 940 — nm
SENSOR
IC= 1 mA BV
CEO
30 — — V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage IE= 0.1 mA BV
ECO
5——V
Collector-Emitter Dark Current VCE= 10 V, IF= 0 mA I
CEO
— — 100 nA
COUPLED
On-state Collector Current I
F
= 40 mA, VCE= 5 V
I
C(ON)
mA
QRB1133 D = .150”
(5,6)
0.20 — —
QRB1134 0.60 —
Collector-Emitter
IF= 20 mA, IC= 0.5 mA V
CE (SAT)
— — 0.4 V
Saturation Voltage
Rise Time VCE= 5 V, RL = 100 " t
r
—8—
µs
Fall Time I
C(ON)
= 5 mA t
f
—8—
Cross Talk IF= 40 mA, VCE= 5 V
(7)
I
CX
— — 1.00 µA
www.fairchildsemi.com 2 OF 4 7/02/01 DS300351
Parameter Symbol Rating Units
Operating Temperature T
OPR
-40 to +85
°C
Storage Temperature T
STG
-40 to +85
°C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
EMITTER
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
SENSOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
50 V
Collector Current I
C
20 mA
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
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