Fairchild Semiconductor QRB1113, QRB1114 Datasheet
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSOR
QRB1113 QRB1114
PACKAGE DIMENSIONS
0.420 (10.67)
E
S
PIN 1
PIN 2
0.328 (8.33)
0.150 (3.81)
NOM
ES
0.226 (5.74)
PIN 3
PIN 4
0.020 (0.51)
4X
0.300 (7.62)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
0.150 (3.81)
MIN
0.603 (15.32)
0.373 (9.47)
REFLECTIVE
SURFACE
PIN1 ANODE
PIN2 CATHODE
PIN3 EMITTER
PIN4 COLLECTOR
0.703 (17.86)
0.210 (5.33)
SCHEMATIC
12 34
DESCRIPTION
The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.
FEATURES
• No contact surface sensing
• Phototransistor output
• Focused for sensing specular reflection
• Daylight filter on photosensor
• Dust cover
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
3/5/02 DS300350
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSOR
QRB1113 QRB1114
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise specified)
A
Parameter Symbol Rating Units
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
(2,3,4)
(2,3)
T
T
T
SOL-I
T
SOL-F
OPR
STG
-40 to +85 °C
-40 to +85 °C
240 for 5 sec °C
260 for 10 sec °C
EMITTER
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
I
F
V
R
P
D
50 mA
5V
100 mW
SENSOR
Collector-Emitter Voltage
Emitter-Collector Voltage
V
V
CEO
ECO
30 V
4.5 V
Collector Current 20 mA
Power Dissipation
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
(1)
P
D
100 mW
(T
ELECTRICAL/OPTICAL CHARACTERISTICS
= 25°C)
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
EMITTER
I
Forward Voltage
Reverse Current
Peak Emission Wavelength
= 40 mA V
F
V
= 5.0 V I
R
I
= 20 mA
F
F
R
λ
PE
——1.7 V
——100 µA
— 940 — nm
SENSOR
I
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
V
= 1 mA BV
C
I
= 0.1 mA BV
E
= 10 V, I
CE
= 0 mA I
F
CEO
ECO
CEO
30 —— V
5 —— V
——100 nA
COUPLED
On-state Collector Current
QRB1114 0.60 —
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Cross Talk
© 2002 Fairchild Semiconductor Corporation
I
= 40 mA, V
F
D = .150"
I
= 20 mA, I
F
V
= 5 V, R
CE
I
C(ON)
I
= 40 mA, V
F
= 5 V
CE
(5,6)
= 0.5 mA V
C
= 100 V
L
= 5 mA
(7)
= 5 V
CE
Page 2 of 4
I
C(ON)
CE (SAT)
t
r
t
f
I
CX
——0.4 V
— 8 —
— 8 —
——1.00 µA
3/5/02 DS300350
mA QRB1113 0.20 ——
µs
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