Fairchild Semiconductor QED233, QED234 Datasheet
FEATURES
• = 940 nm
• Chip material =GaAs with AlGaAs window
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Medium Emission Angle, 40°
• High Output Power
• Package material and color: Clear, untinted, plastic
• Ideal for remote control applications
SCHEMATIC
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
QED233 QED234
2001 Fairchild Semiconductor Corporation
DS300338 10/31/01 1 OF 4 www.fairchildsemi.com
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The QED233 / QED234 is a 940 nm GaAs / AlGaAs LED encapsulated in a clear untinted, plastic T-1 3/4 package.
PLASTIC INFRARED
LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
ANODE
CATHODE
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100 µs, T = 10 ms.
PARAMETER TEST CONDITIONS DEVICE SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 20 mA ALL
PE
— 940 — nm
Spectral Bandwidth IF= 20 mA ALL — 50 — nm
Temp. Coefficient of
PE
IF= 100 mA ALL TC
— 0.2 — nm/K
Emission Angle IF= 100 mA ALL 21/
2
— 40 — Deg.
Forward Voltage IF= 100 mA, tp = 20 ms ALL V
F
——1.6 V
Temp. Coefficient of V
F
IF= 100 mA ALL TC
V
— -1.5 — mV/K
Reverse Current VR= 5 V ALL I
R
——10 µA
Radiant Intensity IF= 100 mA, tp = 20 ms
QED233
I
E
10 — 50
mW/sr
QED234 27 ——
Temp. Coefficient of I
E
IF= 20 mA ALL TC
I
— -0.6 — %/K
Rise Time
I
F
= 100 mA
ALL t
r
— 1000 —
ns
Fall Time ALL t
f
— 1000 —
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
200 mW
Peak Forward Current I
FP
1.5 A
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
QED233 QED234
PLASTIC INFRARED
LIGHT EMITTING DIODE
www.fairchildsemi.com 2 OF 4 10/31/01 DS300338
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