Fairchild Semiconductor QEC112, QEC113 Datasheet
0.030 (0.76)
NOM
0.116 (2.95)
0.193 (4.90)
0.800 (20.3)
MIN
0.050 (1.27)
0.100 (2.54)
NOM
0.018 (0.46)
SQ. (2X)
0.155 (3.94)
CATHODE
0.052 (1.32)
0.032 (0.082)
REFERENCE
SURFACE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300334 5/21/01 1 OF 3 www.fairchildsemi.com
PACKAGE DIMENSIONS
DESCRIPTION
The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.
QEC112 QEC113
FEATURES
• D= 940 nm
• Chip material = GaAs
• Package type: T-1 (3mm)
• Matched Photosensor: QSC112
• Narrow Emission Angle, 24°
• High Output Power
• Package material and color: Clear, peach tinted plastic
PLASTIC INFRARED
LIGHT EMITTING DIODE
ANODE
CATHODE
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 100 mA D
PE
— 940 — nm
Emission Angle IF= 100 mA 201/
2
24 Deg.
Forward Voltage IF= 100 mA, tp = 20 ms V
F
— — 1.5 V
Reverse Current VR= 5 V I
R
——10µA
Radiant Intensity QEC112 IF= 100 mA, tp = 20 ms I
E
6 — 30 mW/sr
Radiant Intensity QEC113 IF= 100 mA, tp = 20 ms I
E
14 — — mW/sr
Rise Time
I
F
= 100 mA
t
r
— 1000 — ns
Fall Time t
f
— 1000 — ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
QEC112 QEC113
PLASTIC INFRARED
LIGHT EMITTING DIODE
www.fairchildsemi.com 2 OF 4 5/21/01 DS300334
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