Fairchild Semiconductor QEB441 Datasheet

2001 Fairchild Semiconductor Corporation
DS300196 5/14/01 1 OF 4 www.fairchildsemi.com
DESCRIPTION
The QEB441 is a 730 nm AlGaAs LED encapsulated in a PLCC-2 package.
QEB441
FEATURES
D= 730 nm
• Surface Mount PLCC-2 package
• Wide Emission Angle, 120°
• High Power
• Tape and Reel option: .TR
SCHEMATIC
0.094 (2.4)
ANODE
0.118 (3.0)
0.102 (2.6)
0.043 (1.1)
0.020 (0.5)
0.083 (2.1)
0.067 (1.7)
0.035 (0.9)
0.028 (0.7)
0.024 (0.6)
0.016 (0.4)
0.134 (3.4)
0.118 (3.0)
0.091 (2.3)
0.083 (2.1)
0.007 (.18)
0.005 (.12)
.041 (0.1)
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches (millimeters)
2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified.
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
ANODE
CATHODE
www.fairchildsemi.com 2 OF 4 5/14/01 DS300196
NOTES
1. Derate power dissipation linearly TBD mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100
µ
s, T= 10 ms.
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS
IF= 10 mA, tp = 20 ms —— 2.0
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
2.1
V
I
F
= 500 mA, tp = 1 ms 3.9 4.5
I
F
= 1A, tp = 100 µs 5.5
Emission Angle IF= 100 mA
20
1/
2
120 %
Reverse Leakage Current VR= 5 V I
R
—— 10 µA
Peak Emission Wavelength IF= 100 mA
D
P
710 730 750 nm
Spectral Bandwidth IF= 100 mA
D
25 nm
IF= 100 mA, tp = 20 ms 2 3 6
Radiant Intensity I
F
= 500 mA, tp = 1 ms I
e
9 14 28 mW/sr
I
F
= 1 A, tp = 100 µs162448
Response Time IF= 10 mA,
tp = 100
µ
s, T = 10 ms
t
r, tf
——100 ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
QEB441
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-55 to +100 °C
Storage Temperature T
STG
-55 to +100 °C
Soldering Temperature (Flow)
(2,3)
T
SOL
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Peak Forward Current
(4)
I
FP
1A
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
180 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
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