Fairchild Semiconductor QEB421 Datasheet

QEB421

SURFACE MOUNT INFRARED

LIGHT EMITTING DIODE

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS

Peak Emission Wavelength IF= 100 mA D

P

— 880 — nm

Spectral Bandwidth IF= 100 mA D —80— nm

Emission Angle IF= 100 mA 0 — 120 — Deg.

Forward Voltage IF= 100 mA, tp = 20 ms V

F

— 1.5 1.8 V

I

F

= 1 A, tp = 100 µs — 3.0 3.8

Reverse Current VR= 5 V I

R

—— 1

µ

A

Radiant Intensity IF= 100 mA, tp = 20 ms Ie 4 — 8 mW/sr

I

F

= 1 A, tp = 100 µs—48—

Radiant Flux IF= 100 mA, tp = 20 ms >e —10— mW

Temp. Coeff. of I

E

IF= 100 mA T

CI

— -0.5 — %/K

Temp. Coeff. of V

F

IF= 100 mA T

CV

— -4 — mV/K

Temp. Coeff. of D IF= 100 mA T

C

D

— 0.25 — nm/K

Rise Time IF= 100 mA t

r

—— 1

µ

s

Fall Time t

f

—— 1

µ

s

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C)

NOTES

1. Derate power dissipation linearly

2.4 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.

4. Pulse conditions; tp = 100

µ

s,

T

=

10 ms.

FEATURES

• Wavelength = 880 nm, AlGaAs

• Wide Emission Angle, 120°

• Surface Mount PLCC-2 Package

• High Power

Parameter Symbol Rating Unit

Operating Temperature T

opr

-55 to +100 °C

Storage Temperature T

stg

-55 to +100 °C

Soldering Temperature (Flow)

(2,3)

T

sol

260 for 10 sec °C

Continuous Forward Current I

F

100 mA

Reverse Voltage V

R

5V

Peak Forward Current

(4)

I

FM

1.75 A

Power Dissipation

(1)

P

D

180 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

SCHEMATIC

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches (mm)

2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.



2001 Fairchild Semiconductor Corporation

DS300385 2/26/01 1 OF 3 www.fairchildsemi.com

0.134 (3.4)

0.118 (3.0)

ANODE

0.118 (3.0)

0.102 (2.6)

0.091 (2.3)

0.083 (2.1)

0.024 (0.6)

0.016 (0.4)

0.035 (0.9)

0.028 (0.7)

0.094 (2.4)

0.007 (.18)

0.005 (.12)

0.083 (2.1)

0.067 (1.7)

0.041 (0.1)

0.043 (1.1)

0.020 (0.5)

ANODE

CATHODE

QEB421

SURFACE MOUNT INFRARED

LIGHT EMITTING DIODE

TYPICAL PERFORMANCE CURVES

www.fairchildsemi.com 2 OF 3 2/26/01 DS300385

Fig. 1 Normalized Radiant Intensity vs. Forward Current

10

Normalized to:
IF = 100 mA Pulsed

tpw =100 us
Duty Cycle = 0.1%

1

= 25˚C

T

A

0.1

0.01

- NORMALIZED RADIANT INTENSITY

e

I

0.001
1 10 100 1000

IF - FORWARD CURRENT (mA)

Fig.3 Radiation Diagram

90

80

180

170

160

150

140

130

120

110

100

70

60

50

40

30

0.0 0.2 0.4 0.6 0.8 1.00.00.20.40.60.81.0

Fig. 2 Forward Current vs. Forward Voltage

2

10

IF Pulsed
tpw = 100 us
Duty Cycle = 0.1%

1

10

T

= 25˚C

A

0

10

-1

10

- FORWARD CURRENT (mA)

-2

F

10

I

-3

10

0.8 1.0 1.2 1.4 1.6

VF - FORWARD VOLTAGE (V)

Fig. 4 Forward Voltage vs. Ambient Temperature

3

Pulsed

I

F

= 100 us

t

pw

Duty Cycle = 0.1%

2

I

= 50 mA

F

1

- FORWARD VOLTAGE (V)

F

20

10

0

V

0

-40 -20 0 20 40 60 80 100

TA - TEMPERATURE (˚C)

I = 100 mA

F

IF = 20 mA

Fig. 5 Spectral Response (TBD)