Fairchild Semiconductor QEB373 Datasheet

1 of 4 100008A

NOTES

1. Derate power dissipation linearly

1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.

4. Soldering iron tip at 1/16” (1.6mm)
from housing

QEB373

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

Parameter Symbol Rating Units

Operating Temperature T

OPR

-40 to +100

°C

Storage Temperature T

STG

-40 to +100

°C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec

°C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec

°C

Continuous Forward Current I

F

50 mA

Reverse Voltage V

R

5V

Power Dissipation

(1)

P

D

100 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS

Peak Emission Wavelength IF= 100mA l

P

— 880 — nm
Emission Angle IF= 100mA U — ±12 — Deg.
Forward Voltage IF= 100mA, tP= 20ms V

F

— — 1.7 V
Reverse Current VR= 5V I

R

— — 100

µ

A
Radiant Intensity IF= 100mA, tP= 20ms Ie 16 — — mW/sr
Rise Time IF= 100mA, t

r

— 800 — ns

Fall Time t

P

= 20ms t

f

— 800 — ns

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C)

PACKAGE DIMENSIONS

0.074 (1.9)

0.008 (0.21)

0.004 (0.11)

0.106 (2.7)

0.091 (2.3)

0.055 (1.4)

0.024 (0.6)

0.016 (0.4)

0.087 (2.2)

0.071 (1.8)

0.019 (0.5)

0.012 (0.3)

0.276 (7.0)
MIN

0.024 (0.6)

.059 (1.5)
.051 (1.3).118 (3.0)

.102 (2.6)

CATHODE

NOTES:

1. Dimensions are in inches (mm).

2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.

FEATURES

• T-3/4 (2mm) Surface Mount Package

• Tape & Reel Option (See Tape & Reel Specifications)

• Lead Form Options: Gullwing, Yoke, Z-Bend

• Narrow Emission Angle, 24°

• Wavelength = 880nm, AlGaAs

• Clear Lens

• Matched Photosensor: QSB363

• High Radiant Intensity

SCHEMATIC

ANODE

CATHODE

2 of 4 100008A

TYPICAL PERFORMANCE CURVES

QEB373

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

Fig. 1 Maximum Forward Current vs.

Temperature

200

160

(mA)

F

120

80

40

Forward Current I

0

-25 0 25 50 75 85 100

Ambient Temperature TA (˚C)

Fig. 3 Peak Emission Wavelength vs.

Ambient Temperature

920

900

880

860

Peak Emission Wavelength (nm)

840

-25 0

25 50 75 100

Ambient Temperature TA (˚C)

Fig. 5 Relative Radiant Flux vs.

Ambient Temperature

20

10

5

Fig. 2 Relative Radiant Intensity vs.

Wavelength

100

80

60

40

20

Relative Radiant Intensity (%)

0

820 840 860 880 900 920 940 960 980

Wavelengthl l (nm)

IF = 20mA

A = 25˚C

T

Fig. 4 Forward Current vs.

Forward Voltage

500

200
100

(mA)

F

50

20
10

5

Forward Current I

2
1

1 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward Voltage VF (V)

Fig. 6 Relative Radiant Intensity vs.

Angular Displacement

0 1010 2020 3030

2
1

0.5

Relative Radiant Flux (%)

0.2

0.1

-25 0 25 50 75 100

Ambient Temperature TA (˚C)

40

50

60
70
80

Relative Radiant Intensity

90

0.6 0.4 0.2 0 0.2 0.4 0.6

Ambient Temperature TA (˚C)

40

50

60
70
80

90