Fairchild Semiconductor QEB363 Datasheet

1 of 4 100007C

NOTES

1. Derate power dissipation linearly

1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.

4. Soldering iron tip at 1/16” (1.6mm)
from housing

QEB363

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

Parameter Symbol Rating Units

Operating Temperature T

OPR

-40 to +100

°C

Storage Temperature T

STG

-40 to +100

°C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec

°C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec

°C

Continuous Forward Current I

F

50 mA

Reverse Voltage V

R

5V

Power Dissipation

(1)

P

D

100 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS

Peak Emission Wavelength IF= 100 mA !

P

— 940 — nm
Emission Angle IF= 100 mA " — ±12 — Deg.
Forward Voltage IF= 100 mA, tP= 20 ms V

F

— — 1.6 V
Reverse Current VR= 5 V I

R

— — 100

µ

A
Radiant Intensity IF= 100 mA, tP= 20 ms Ie 8 — — mW/sr
Rise Time IF= 100 mA, t

r

—1—

µ

s

Fall Time t

P

= 20 ms t

f

—1—

µ

s

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C)

PACKAGE DIMENSIONS

0.074 (1.9)

0.008 (0.21)

0.004 (0.11)

0.106 (2.7)

0.091 (2.3)

0.055 (1.4)

0.024 (0.6)

0.016 (0.4)

0.087 (2.2)

0.071 (1.8)

0.019 (0.5)

0.012 (0.3)

0.276 (7.0)
MIN

0.024 (0.6)

.059 (1.5)
.051 (1.3).118 (3.0)

.102 (2.6)

CATHODE

NOTES:

1. Dimensions are in inches (mm).

2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.

FEATURES

• T-3/4 (2mm) Surface Mount Package

• Tape & Reel Option (See Tape & Reel Specifications)

• Lead Form Options: Gullwing, Yoke, Z-Bend

• Narrow Emission Angle, 24°

• Wavelength = 940 nm, GaAs

• Pink Tinted Lens

• Matched Photosensor: QSB363

• High Radiant Intensity

SCHEMATIC

ANODE

CATHODE

TYPICAL PERFORMANCE CURVES

2 of 4 100007C

QEB363

SUBMINIATURE PLASTIC INFRARED

EMITTING DIODE

Fig. 1 Maximum Forward Current vs.

Temperature

200

160

(mA)

F

120

80

40

Forward Current I

0

-25 0 25 50 75 85 100

Ambient Temperature TA (˚C)

Fig. 3 Peak Emission Wavelength vs.

Ambient Temperature

980

960

940

920

Peak Emission Wavelength (nm)

900

-25 0

25 50 75 100

Ambient Temperature TA (˚C)

Fig. 5 Relative Radiant Flux vs.

Ambient Temperature

20

10

5

Fig. 2 Relative Radiant Intensity vs.

Wavelength

100

80

60

40

20

Relative Radiant Intensity (%)

0

880 900 920 940 960 980 1000 1020 1040

Wavelengthl !#(nm)

IF = 20 mA

A = 25˚C

T

Fig. 4 Forward Current vs.

Forward V oltage

500

200
100

(mA)

F

50

20
10

5

Forward Current I

2
1

1 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward V oltage VF (V)

Fig. 6 Relative Radiant Intensity vs.

Angular Displacement

01010 2020 3030

2
1

0.5

Relative Radiant Flux (%)

0.2

0.1

-25 0 25 50 75 100

Ambient Temperature TA (˚C)

40

50

60
70
80

Relative Radiant Intensity

90

0.6 0.4 0.2 0 0.2 0.4 0.6

Ambient Temperature TA (˚C)

40

50

60
70
80

90