Fairchild Semiconductor MPSA42, MMBTA42, PZTA42 Datasheet

MPSA42 / MMBTA42 / PZTA42

MMBTA42MPSA42

C

E

C

B

E

TO-92

SOT-23

Mark: 1D

B

PZTA42

C

C

B

SOT-223

NPN High Voltage Amplifier

This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CES

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter V ol tage 300 V
Collector-Base Voltage 300 V
Emitter-Base Volt age 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150

°

C

E

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

MPSA42 *MMBTA42 **PZTA42

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

 2000 Fairchild Semiconductor International

Total Device Dissipation

Derate above 25°C

Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 125

625

5.0

350

2.8

2

1,000

8.0

.

MPSA42/MMBTA42/PZTA42 Rev A

mW

mW/°C

C/W

°

C/W

°

(BR)

(BR)

(BR)

µ

µ

NPN High Voltage Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

ON CHARACTERISTICS*

h

FE

V

CE(

sat

V

sat

BE(

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage

I

= 100 µA, IE = 0

C

= 100 µA, IC = 0

I

E

300 V

6.0 V
Collector-Cutoff Current VCB = 200 V, IE = 0 0.1
Emitte r-Cutoff Current VEB = 6.0 V, IC = 0 0.1

DC Current Gain IC = 1.0 mA, VCE = 10 V

I

= 10 mA, VCE = 10 V

C

I

= 30 mA, VCE = 10 V

Collector-Emitter Saturatio n Voltage IC = 20 mA, IB = 2.0 mA 0.5 V

)

Base-Emitter Saturatio n Voltage IC = 20 mA, IB = 2.0 mA 0.9 V

)

C

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

25
40
40

50 MHz

f = 100 MHz

Collector-Base Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3.0 pF

A
A

MPSA42 / MMBTA42 / PZTA42

Spice Model

NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2
Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n
Itf=5 Vtf=20 Xtf=150 Rb=10)

Typical Characteristics

DC Current Gain

vs Collector Current

140
120
100

80
60
40

E
F

20

h - DC CURRENT GAIN

0.1 1 10 100

125 °C

25 °C

- 40 ºC

V = 5V

CE

I - COLLECTOR CURRENT (mA)

C

Collector-Emitter Saturation

Voltage vs Collector Current

0.3

= 10

β

0.25

0.2

0.15

0.1

0.05

0.1 1 10 100

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

- 40 ºC

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

Typical Characteristics (continued)

MPSA42 / MMBTA42 / PZTA42

NPN High Voltage Amplifier

(continued)

Base-Emitter Saturation

Voltage vs Collector Current

1

0.8

0.6

- 40 ºC
25 °C

125 °C

0.4

β

0.2

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Collector-Cuto ff Current

vs Ambient Temperature

100

V = 150V

CB

10

CBO

1

I - COLLECTOR CURRENT (nA)

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

º

= 10

Base-Emitter ON Voltage vs

Collector Current

1

0.8

0.6

0.4

0.2

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 ºC
25 °C

125 °C

V = 1V

CE

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Collector-Base and Emitter-Base

Capacitance vs Reverse Bias Voltage

100

50

20
10

5

CAPACITANCE (pF)

2
1

1 10 100 1000

C

eb

REVERSE BIAS VOLTAGE (V)

T = 25 °C

A

C

cb

Power Dissipation vs

Ambient Temperature

1

0.75

TO-92

0.5

SOT-23

0.25

D

P - POWER DISSIPATION (W)

0

0 255075100125150

SOT-223

TEMPERATURE ( C)

o

TO-92 Tape and Reel Data and Package Dimensions

TO-92 Packaging
Configuration: Figure 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORATION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

B2

(FSCINT)

F63TNR Label sample

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL code

Reel A 2,000 D26Z

Ammo M 2,000 D74Z

Unit w eight = 0.22 gm
Reel weight with components = 1.04 kg
Amm o weight with componen ts = 1.02 kg
Max q uantity per intermediate box = 10,000 u n its

E2,000 D27Z

P2,000 D75Z

(TO-92) BULK PACKING INFORMATION

EOL

CODE

J18Z

J05Z

NO EOL

CODE

DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD

STRAIGHT

NO LEADCLIP

LEADCLIP

DIMENSION

327mm x 158mm x 135mm

Immediate Box

Customized
Label

QUANTITY

2.0 K / BOX

1.5 K / BOX

2.0 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Intermediate Box

F63TNR
Label

Customized
Label

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Ammo boxes per

Intermediate Box

F63TNR
Label

BULK OPTION

See Bulk Packing
Information table

FSCINT Label

375mm x 267mm x 375mm

Intermediate Box

333mm x 231mm x 183mm

Intermediate Box

Anti-static

Bubble Sheets

FSCINT
Label

Customized
Label

FSCINT
Label

Customized
Label

530mm x 130mm x 83mm

FSCINT Label

Intermediate box

2000 units per
EO70 box for

std option

C
Label

10,000 units maximum

per intermediate box

for std option

ustomized

5 EO70 boxes per
intermediate Box

114mm x 102mm x 51mm

Immediate Box

September 1999, Rev. B

TO-92 Tape and Reel Data and Package Dimensions, continued

TO-92 Reeling Style
Configuration: Figure 2.0

Machine Option “A” (H)

Style “A”, D26Z, D70Z (s/h )

TO-92 Radial Ammo Packaging
Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP

ORDER STYLE

D74Z (M)

Machine Option “E” (J)

Style “E”, D27 Z, D71 Z (s/ h)

FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP

September 1999, Rev. B