Fairchild Semiconductor PN930 Datasheet
PN930
PN930
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general
purpose applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN930
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 045V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 45 V
Em i t ter - Bas e B r e akdown Vol tage IE = 10 nA, IC = 0 5.0 V
Colle c tor Cu tof f Cu r ren t VCE = 5.0 V 2.0 nA
Colle c tor Cu tof f Cu r ren t VCB = 45 V, IE = 0 10 nA
Colle c tor Cu tof f Cu r ren t VCE = 45 V, IE = 0
= 45 V, IE = 0, TA = 170 °C
V
CE
10
10
nA
µ
A
Emit ter Cutoff C u rre nt VEB = 5.0 V, IC = 0 10 nA
DC Cu r re n t Ga in
= 5.0 V, IC = 10 µA
V
CE
= 5.0 V, IC = 10 µA,
V
CE
T = − 55 °C
= 5.0 V, IC = 500 µA
V
CE
= 5.0 V, IC = 10 mA
V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 1.0 V
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.6 1.0 V
)
CE
100
20
150
300
600
PN930
SMALL SIGNAL CHARACTERISTICS
C
ob
h
fe
h
ib
h
rb
h
ob
NF Noise Figure
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 8.0 pF
Small-Signal Current Gain IC = 500 µA, VCE = 5.0 V,
Inpu t Im peda nce IC = 1.0 mA, VCE = 5.0 V, 25 32 Ω
Vol t a ge F e edbac k Rati o f = 1.0 kHz 600
Output Adm i ttance 1.0 µmho
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 20 MHz
= 1.0 mA, VCE = 5.0 V,
I
C
f = 1. 0 kHz
= 5.0 V, IC = 10 µA,
V
CE
Rg = 10 kΩ, BW = 15.7 kHz
1.5
150 600
3.0 dB
x10
6
−
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