Fairchild Semiconductor PN5134 Datasheet
PN5134
PN5134
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 10 V
Collector-Base Voltage 20 V
Em i t ter - Bas e V olt ag e 3. 5 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN5134
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)CES
I
CBO
I
CES
ON CHARACTERISTICS*
h
FE
V
CE(
sat
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 010V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 20 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
3.5 V
Collector-Emitter Breakdown Voltage IC = 10 µA20V
Colle c tor Cu tof f Cu r ren t
= 15 V, IE = 0, TA = 65 °C
V
CB
Colle c tor Cu tof f Cu r ren t VCE = 15 V, IC = 0 0.4
DC Cu r re n t Ga in VCE = 1.0 V, IC = 10 mA
= 0.4 V, IC = 30 mA
V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base- Emi tt er Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
CE
= 10 mA, IB = 3.3 mA
I
C
= 10 mA, IB = 3.3 mA
I
C
20
15
0.70
0.72
10
150
0.25
0.20
0.9
1.1
µ
A
µ
A
V
V
V
V
PN5134
SMALL SIGNAL CHARACTERISTICS
C
ob
h
fe
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
s
t
on
t
d
t
r
t
off
t
s
t
f
St or age Tim e IC = IB1 = IB2 = 10 mA 18 ns
Turn-on Time VCC = 3.0 V, IC = 10 mA, 18 ns
De la y Ti m e IB1 = 3.3 mA 14 ns
Rise Time 12 ns
Turn-off Time VCC = 3.0V, IC = 10 mA 18 ns
St or age Tim e IB1 = IB2 = 3.3 mA 13 ns
Fall Time 13 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
2.5
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