Fairchild Semiconductor PN4917 Datasheet
PN4917
PN4917
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN4917
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)CES
I
B
I
CES
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 030V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Collector-Emitter Breakdown Voltage IC = 10 µA30V
Base Cutoff Current VCE = 15 V 25 nA
Colle c tor Cu tof f Cu r ren t VCE = 15 V
VCE = 15 V, TA = 65 °C
DC Cu r re n t Ga in
= 1.0 V, IC = 100 µA
V
CE
= 1.0 V, IC = 1.0 mA
V
CE
VCE = 1.0 V, IC = 10 mA
= 1.0 V, IC = 50 mA
V
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
)
Base-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
)
CE
= 10 mA, IB = 1.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
= 10 mA, IB = 1.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
100
150
150
30
0.70
0.75
25
25
300
0.13
0.14
0.30
0.75
0.90
1.10
nA
µ
A
V
V
V
V
V
V
PN4917
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
rb’Cc Collector-Base Time Constant VCE = 20 V, IC = 10 mA
NF Noise Figure VCE = 5.0 V, IC = 1.0 mA,
Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF
Input Capacitance VEB = 0.5 V, f = 1.0 MHz 8.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 20 V,
f = 100 MHz
f = 80 MHz
RS = 100 Ω, f = 100 MHz
= 5.0 V, IC = 100 µΑ,
V
CE
= 1.0 kΩ
R
S
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time VCC = 10 V, IC = 50 mA, 40 ns
De lay Ti m e IB1 = 5.0 mA 15 ns
Rise Time 40 ns
Turn-off Time VCC = 10 V, IC = 50 mA 150 ns
St or age Tim e IB1 = IB2 = 5.0 mA 140 ns
Fall Time 40 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
4.5
50 ps
6.0
4.0
dB
dB
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