Fairchild Semiconductor PN4356 Datasheet
PN4356
PN4356
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN4356
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(
sat
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 080V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
Colle c tor Cu tof f Cu r ren t VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 75 °C
Emit ter Cutoff C u rre nt VEB = 5.0 V, IC = 0
VEB = 4.0 V, IC = 0
DC Cu r re n t Ga in
= 10 V, IC = 100 µA
V
CE
VCE = 10 V, IC = 1.0 mA
= 10 V, IC = 10 mA
V
CE
= 10 V, IC = 100 mA
V
CE
VCE = 10 V, IC = 500 mA
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
IC = 500 mA, IB = 50 mA
= 500 mA, IB = 50 mA
I
C
5.0 V
50
5.0
10
100
25
40
50
250
40
30
0.15
0.50
0.90
1.10
nA
µ
µ
nA
A
A
V
V
V
V
PN4356
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
NF Noise Figure
Output Capacitance VCB = 10 V, f = 1.0 MHz 30 pF
Input Capacitance VEB = 0.5 V, f = 1.0 MHz 110 pF
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
on
t
off
Turn-on Time VCC = 30 V, IC = 500 mA, 100 ns
Turn-off Time IB1 = IB2 = 50 mA 400 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 10 0 M Hz
= 10 V, IC = 100 µA,
V
CE
= 1.0 kΩ, f = 1.0 kHz,
R
S
= 1.0 Hz
B
W
1.0 5.0
3.0 dB
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