Fairchild Semiconductor PN4275 Datasheet

PN4275

PN4275

Discrete POWER & Signal

Technologies

C

B

E

TO-92

NPN Switching Transistor

This device is designed for high speed saturated switching
applications at currents to 100 mA. Sourced from Process 21.
See PN2369A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Collector-Emitter Voltage 15 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 4. 5 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150

°C

Symbol Characteri st ic Max Units

PN4275

P

D

R

θ

JC

R

θ

JA

 1997 Fairchild Semiconductor Corporation

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357

350

2.8

mW

mW/°C

°C/W

NPN Switching Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

V

(BR)CES

I

B

I

CBO

ON CHARACTERISTICS*

h

FE

V

sat

CE(

V

sat

BE(

Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 015V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage

= 10 µA, IC = 0

I

E

4.5 V
Collector-Emitter Breakdown Voltage IC = 10 µA, IB = 0 40 V
Base Cutoff Current VCE = 20 V 0.4
Colle c tor Cu tof f Cu r ren t VCB = 20 V, IE = 0,

= 65 °C

T

A

DC Cu r re n t Ga in IC = 10 mA, VCE = 1.0 V

= 30 mA, VCE = 0.4 V

I

C

= 100 mA, VCE = 1.0 V

I

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

)

C

= 30 mA, IB = 3.0 mA

I

C

= 10 mA, IB = 3.3 mA

I

C

IC = 100 mA, IB = 10 mA

= 10 mA, IB = 1.0 mA,

I

C

= 65 °C

T

Base- Emi tt er Saturation Voltage IC = 10 mA, IB = 1.0 mA

)

A

IC = 30 mA, IB = 3.0 mA

= 10 mA, IB = 3.3 mA

I

C

= 100 mA, IB = 10 mA

I

C

35
30
18

0.72

0.74

10

120

0.20

0.25

0.18

0.50

0.30

0.85

1.15

1.0

1.6

µ

A

µ

A

V
V
V
V

V
V

V
V
V

PN4275

SMALL SIGNAL CHARACTERISTICS

C

ob

h

fe

Output Capacitance VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,

SWITCHING CHARACTERISTICS

t

on

t

d

t

r

t

off

t

s

t

f

t

s

Turn-on Time VCC = 3.0 V, IC = 10 mA, 12 ns
De la y Ti m e IB1 = 3.3 mA, 9.0 ns
Rise Time
Turn-off Time VCC = 3.0 V, IC = 10 mA 12 ns
St or age Tim e IB1 = IB2 = 3.3 mA 8.0 ns
Fall Time
St or age Tim e IC = IB1 = IB2 = 10 mA 13 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

f = 100 MHz

V

= -3.0 V

BE (off)

= -3.0 V

V

BE (off)

4.0

7.0 ns

8.0 ns