Fairchild Semiconductor PN4249 Datasheet
PN4249
PN4249
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristi c Max Units
PN4249
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
SMALL SIGNAL CHARACTERISTICS
C
ob
h
ie
h
oe
h
re
NF Noise Figure
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Co llecto r-E mit te r Bre a k d o wn
IC = 5.0 mA, IB = 0 60 V
Voltage*
Co llecto r-E mit te r Bre a k d o wn
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IB = 0
C
IC = 10 µA, IE = 0
= 10 µA, IC = 0
I
E
60 V
60 V
5.0 V
Co llecto r-C utoff Curr e nt VCB = 40 V, IE = 0 10 nA
Emitte r-C u toff Curren t VEB = 3.0 V, IC = 0 20 nA
DC Current Gain
Collector-Emitter Sat uration Voltage IC = 10 mA , IB = 0. 5 mA 0.25 V
)
VCE = 5.0 V, IC = 100 µA
100 300
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 6. 0 pF
Input Impedance VCE = 5.0 V, IC = 1.0 mA, 2.5 17
Output Admittance f = 1.0 kHz 5.0 40
Voltage Feedback Ratio 10
= 5.0 V, IC = 250 µA,
V
CE
RS = 1.0 kΩ, f = 1.0 kHz,
BW = 150 Hz
VCE = 5.0 V, IC = 20 µA,
= 10 kΩ , f = 1.0 kHz,
R
S
= 150 Hz
B
W
3.0
3.0
Ω
k
µmhos
x10
dB
dB
PN4249
-4
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