Fairchild Semiconductor PN4143 Datasheet
PN4143
PN4143
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN4143
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Colle c tor Cu tof f Cu r ren t VCE = 30 V, VOB = 0.5 V 50 nA
Base Cutoff Current VCE = 30 V, VOB = 0.5 V 50 nA
DC Curren t Ga in
= 10 V, IC = 100 µA
V
CE
V
= 10 V, IC = 1.0 mA
CE
VCE = 10 V, IC = 10 mA
= 10 V, IC = 150 mA
V
CE
= 10 V, IC = 500 mA
V
CE
VCE = 1.0 V, IC = 150 m A
Collector-Emitter Saturation Voltage IC = 150 mA , IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA , IB = 15 mA
)
= 500 mA , IB = 50 mA
I
C
= 500 mA , IB = 50 mA
I
C
35
50
75
100
30
50
300
0.4
1.6
1.3
2.6
V
V
V
V
PN4143
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance VCB = 10 V, f = 100 kHz 8.0 pF
Input Capacitance VEB = 2.0 V, f = 100 kHz 30 pF
Small-Signal Current Gain IC = 50 mA, VCE = 20 V,
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time VCC = 30 V, IC = 150 mA, 45 ns
De la y Ti m e IB1 = 15 mA 10 ns
Rise Time 40 ns
Turn-off Time VCC = 30 V, IC = 150 mA 100 ns
St or age Tim e IB1 = IB2 = 15 mA 80 ns
Fall Time 30 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
2.0
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