Fairchild Semiconductor PN4141 Datasheet

PN4141

PN4141

Discrete POWER & Signal

Technologies

C

B

E

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Collector-Emitter Voltage 30 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150

°C

Symbol Characteri st ic Max Units

PN4141

P

D

R

θ

JC

R

θ

JA

 1997 Fairchild Semiconductor Corporation

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200

625

5.0

mW

mW/°C

°C/W

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CEX

I

BL

ON CHARACTERISTICS*

h

FE

V

sat

CE(

V

sat

BE(

Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 30 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage

= 10 µA, IC = 0

I

E

5.0 V
Collector Cutoff Current VCE = 40 V, VOB = 3.0 V 50 nA
Base Cutoff Current VCE = 40 V, VOB = 3.0 V 50 nA

DC Cu r re n t Ga in

= 10 V, IC = 100 µA

V

CE

V

= 10 V, IC = 1.0 mA

CE

VCE = 10 V, IC = 10 mA

= 10 V, IC = 150 mA

V

CE

= 10 V, IC = 500 mA

V

CE

= 1.0 V, IC = 150 mA

V

Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA

)

Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA

)

CE

= 500 mA, IB = 50 mA

I

C

= 500 mA, IB = 50 mA

I

C

35
50
75

100

30
50

300

0.4

1.6

1.3

2.6

V
V
V
V

PN4141

SMALL SIGNAL CHARACTERISTICS

C

ob

h

fe

Output Capacitance VCB = 10 V, f = 100 kHz 8.0 pF
Small-Signal Current Gain IC = 20 mA, VCE = 20 V,

SWITCHING CHARACTERISTICS

t

d

t

r

t

s

t

f

Delay Time VCC = 30 V, IC = 150 mA, 10 ns
Rise Time
St or age Tim e VCC = 30 V, IC = 150 mA, 250 ns
Fall Time IB1 = IB2 = 15 mA 60 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

f = 10 0 M Hz

= 15 mA, V

I

B1

OB

(off )

= 0.5 V

2.5

40 ns