Fairchild Semiconductor PN3638A, PN3638 Datasheet
PN3638
PN3638A
PN3638 / PN3638A
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 25 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 4.9 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristi c Max Units
PN3638/A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
IC = 10 mA , IB = 0 25 V
Voltage*
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdow n Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IB = 0
C
= 10 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
Co llec tor- Cuto ff Cur rent VCE = 15 V, IE = 0
VCE = 15 V, IE = 0, TA = 65°C
DC Cu r re n t Ga in VCE = 1.0 V, IC = 50 mA
V
= 2.0 V, IC = 300 mA
CE
= 10 V, IC = 100 mA
V
CE
= 10 V, IC = 1.0 mA
V
CE
Collector-Emitter Saturation Vol tage IC = 50 mA, IB = 2.5 mA
)
Base-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mA
)
IC = 300 mA, IB = 30 mA
= 300 mA, IB = 30 mA 0.8
I
C
PN3638
PN3638A
PN3638
PN3638A
PN3638
PN3638A
PN3638A
25 V
25 V
4.0 V
35
2.0
30
100
30
20
20
80
100
0.25
1.0
1.1
2.0
nA
µ
V
V
V
V
A
PN3638 / PN3638A
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
ie
h
oe
h
re
Output Capacitance VCB = 10 V, f = 1.0 MHz
Input Capacitance VBE = 0.5 V, f = 1.0 MHz
Small-Signal Current Gain IC = 50 mA, VCE = 3.0 V,
Input Impedance IC = 10 mA, VCE = 10 V, 2.0
Output Admittance f = 1.0 kHz 1.2
Voltage Feedback Ratio PN3638
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-o n Time VCC = 10 V, IC = 300 mA, 75 ns
Delay Time IB1 = 30 mA 20 ns
Rise Time 70 ns
Turn -off Tim e VCC = 10 V, IC = 300 mA 170 ns
Storage Time IB1 = IB2 = 30 mA 140 ns
Fall Time 70 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
PN3638
PN3638A
PN3638
PN3638A
f = 100 MHz
PN3638
PN3638A
= 10 mA, VCE = 10 V,
I
C
f = 1.0 kHz PN3638
PN3638A
PN3638A
1.0
1.5
25
100
20
10
65
25
26
15
pF
pF
pF
pF
Ω
k
µmhos
-4
x10
-4
x10
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