Fairchild Semiconductor PN3568 Datasheet
PN3568
PN3568
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose, medium power
amplifiers and switches requiring collector currents to 500 mA.
Sourced from Process 12. SeeTN3019A for characteristics.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 60 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN3568
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
625
5.0
mW
mW/°C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
on)
BE(
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 060V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage IE = 10 µA, IC = 0 5.0 V
Colle c tor Cu tof f Cu r ren t VCB = 40 V, IE = 0
= 40 V, IE = 0, TA = 75 °C
V
CB
50
5.0
nA
µ
A
Emit ter Cutoff C u rre nt VEB = 4.0 V, IC = 0 25 nA
DC Cu r re n t Ga in VCE = 1.0 V, IC = 30 mA
V
= 1.0 V, IC = 150 mA
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.25 V
)
CE
40
40 120
Base- Emi tt er O n V oltage VCE = 1.0 V, IC = 150 mA 1.1 V
Output Capacitance VCB = 10 V, f = 1.0 MHz 20 pF
Input Capacitance VEB = 0.5 V, f = 1.0 MHz 80 pF
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
3.0 30
f = 20 MHz
PN3568
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