Fairchild Semiconductor PN3565 Datasheet
PN3565
PN3565
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 25 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 6. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
PN3565
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
625
5.0
mW
mW/°C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
SMALL SIGNAL CHARACTERISTICS
C
ob
h
ie
h
oe
h
fe
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Co ll ector-E m itter Br eakd ow n Volt age* IC = 2.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V
Emitter-Base Breakdown Voltage
= 10 µA, IC = 0
I
E
6.0 V
Collector Cut of f Current VCB = 25 V, IE = 0 50 nA
DC Cu r re n t Gai n VCE = 10 V, IC = 1.0 mA 150 600
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.35 V
)
Output Capacitance VCB = 5.0 V 4.0 pF
Input Impedance IC = 1.0 mA, VCE = 5.0 V,
2.0 20 kΩ
f = 1. 0 kHz
Output Admittance IC = 1.0 mA, VCE = 5.0 V,
0.5 35 µmhos
f = 1. 0 kHz
Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V,
f = 20 MHz
= 1.0 mA, VCE = 5.0 V,
I
C
f = 1. 0 kHz
2.0
120
12
750
PN3565
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