Fairchild Semiconductor MMBT2907, PN2907 Datasheet
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
MMBT2907PN2907
C
SOT-23
Mark: 2B
PN2907 / MMBT2907
Discrete POWER & Signal
Technologies
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
PN2907 *MMBT2907
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 °C/W
625
5.0
350
2.8
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
B
I
CBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Colle c tor Cu tof f Cu r ren t VCE = 30 V 50 nA
Base Cutoff Current VBE = 0.5 V 50 nA
Colle c tor Cu tof f Cu r ren t VCB = 50 V, IE = 0
= 50 V, IE = 0, TA = 150 °C
V
CB
DC Cu r re n t Ga in VCE = 10 V, IC = 0.1 mA
= 10 V, IC = 1.0 mA
V
CE
= 10 V, IC = 10 mA
V
CE
= 10 V, IC = 150 mA
V
CE
= 10 V, IC = 500 mA
V
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
CE
= 500 mA, IB = 50 mA
I
C
= 500 mA, IB = 50 mA
I
C
35
50
75
100
30
20
20
300
0.4
1.6
1.3
2.6
nA
µ
A
V
V
V
V
PN2907 / MMBT2907
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance VCB = 10 V, f = 1.0 MHz 8.0 pF
Input Capacitance VEB = 2.0 V, f = 1.0 MHz 30 pF
Small-Signal Current Gain IC = 50 mA, VCE = 20 V,
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time VCC = 30 V, IC = 150 mA, 45 ns
De la y Ti m e IB1 = 15 mA , PW = 200 ns 10 ns
Rise Time 40 ns
Turn-off Time VCC = 6.0 V, IC = 150 mA 100 ns
St or age Tim e IB1 = IB2 = 15 mA 80 ns
Fall Time 30 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 10 0 M Hz
2.0
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